MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVBLS1D7N08H(TOKMAS)


85V 300A 1.2m@10V,50A 1PCSNChannel TOLL-8L MOSFETs ROHS
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Tokmas 662
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AUD 1.1977
Multiples of: 1

                   
RM150N60HD-W


MOSFETs
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Rectron 662
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AUD 1.6582
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150 A60 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C220 WSMD/SMTD2PAK - 2 (TO - 263 - 2)Reel , Cut TapeSi1 Channel- 20 V , + 20 V163 nCEnhancement  
WGP12N65SE


TO-220 MOSFETs ROHS
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Wild Goose 661
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AUD 0.4576
Multiples of: 1

                   
IPP048N12N3 G


MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
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Infineon 661
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AUD 3.5299
Multiples of: 1

100 A120 V4.8 mOhmsN - Channel 3 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V137 nC  Optimos
AIMBG75R140M1HXTMA1


MOSFETs AUTOMOTIVE_SICMOS
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Infineon 661
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AUD 4.2522
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           Reel , Cut TapeSi     CoolSiC
IPW65R019C7FKSA1


Infineon Technologies MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
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Infineon 661
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AUD 21.9836
Multiples of: 1

75 A650 V19 mOhmsn - channel 3 V- 55 C+ 150 C446 Wthrough holeTO - 247 - 3Tubesi1 channel10 V215 nCenhancement coolmos
IRF2804PBF(UMW)


TO-220 MOSFETs ROHS
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Youtai 660
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AUD 0.6772
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IXTA6N100D2HV


MOSFET DISCMOSFET N-CH DEPL MODE-D2
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IXYS 660
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AUD 18.0104
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6 A1 kV2.2 OhmsN - Channel 2.5 V- 55 C+ 150 C300 WSMD/SMTTO - 263AA - 3TubeSi1 Channel- 20 V , 20 V95 nCDepletion  
G6N02L-B


SOT-23-3L MOSFETs ROHS
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GOFORD 659
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AUD 0.0197
Multiples of: 20

                   
NVMFD5C672NLWFT1G


MOSFET T6 60V LL S08FL DS
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ON Semiconductor 0
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AUD 0.9469
Multiples of: 1

49 A60 V9.8 mOhms , 9.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C45 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V12.3 nC , 12.3 nCEnhancementAec - Q101 
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