MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AOSD62666E


Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega 675
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AUD 0.5452
Multiples of: 1

                   
DMN3069L-7


MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K
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Diodes Incorporated 664
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AUD 0.2837
Multiples of: 5

                   
ZXMS6004FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 664
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AUD 0.3944
Multiples of: 1

1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
WMP09N90C2


Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
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Wayon 664
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AUD 1.1513
Multiples of: 1

            WMOS C2      
NVF2955T1G


MOSFET PFET SOT223 60V 2.6A 140M
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ON Semiconductor 664
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AUD 1.5254
Multiples of: 1

2.6 A60 V154 mOhmsP - Channel 4 V- 55 C+ 175 C2.3 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V14.3 nC Aec - Q101 
FQB7N60TM


MOSFET 600V N-Channel QFET
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ON Semiconductor 664
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AUD 1.5761
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7.4 A600 V1 Ohmsn - channel  - 55 C+ 150 C3.13 Wsmd/smtTO - 263Reelsi1 channel30 V enhancement  
FDB16AN08A0


MOSFET Discrete Auto N-Ch UltraFET Trench
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ON Semiconductor 664
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AUD 2.3134
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58 A75 V13 mOhmsN - Channel  - 55 C+ 175 C135 WSmd/SmtTO - 263ReelSi1 Channel20 V Enhancement Powertrench
FDB5800


Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
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ON Semiconductor 664
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AUD 4.2
Multiples of: 1

            Powertrench®      
SIS435DNT-T1-GE3


Vishay Semiconductors MOSFET 20V .0054ohm4.5V 30A P-Ch G-III
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Vishay 662
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AUD 0.4323
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- 22 A- 20 V5.4 mOhmsP - Channel 900 mV- 55 C+ 150 C3.7 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel8 V180 nCEnhancement Trenchfet, Powerpak
NVR5198NLT3G


ON Semiconductor MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
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ON Semiconductor 565
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AUD 0.1144
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2.2 A60 V155 mOhmsN - Channel     Smd/SmtSOT - 23 - 3ReelSi1 Channel   Aec - Q101 
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