MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN53D0LT-7


MOSFETs 2N7002 Family SOT523 T&R 3K
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Diodes Incorporated 1076
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AUD 0.0776
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IRL40SC209


40V 478A 0.8mO@100A,10V 375W null D2PAK-7P MOSFETs ROHS
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Infineon 715
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AUD 3.2837
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478 A40 V600 uOhmsN - Channel 1 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7 Si1 Channel20 V267 nCEnhancement Strongirfet
WGF16N50SE


TO-220F MOSFETs ROHS
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Wild Goose 714
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AUD 0.4014
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RCJ700N20TL


MOSFET 10V DRIVE N-Ch MOSFET
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ROHM 714
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AUD 2.4369
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IRF150DM115XTMA1


MOSFETs TRENCH >=100V
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Infineon 713
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AUD 2.6433
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60 A150 V11.3 mOhmsN - Channel 3.8 V- 40 C+ 150 C78 WSMD/SMTWG - WDSON - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V33 nCEnhancement OptiMOS DirectFET
FDPF39N20TLDTU


Fairchild Semiconductor MOSFET UniFET200V LDTU Form
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ON Semiconductor 713
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AUD 1.4842
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         Through HoleTO - 220FP - 3TubeSi     Unifet
IPB95R130PFD7ATMA1


MOSFETs N
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Infineon 713
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AUD 5.1224
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36.5 A950 V130 mOhmsN - Channel 2.5 V- 55 C+ 150 C227 WSMD/SMTTO - 263 - 3Reel , Cut Tape 1 Channel- 20 V , + 20 V141 nCEnhancement  
HSK5N04


40V 5A 1.7W 30m@10V,4A 2.5V@250uA 1 N-Channel SOT-89 MOSFETs ROHS
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HUASHUO 712
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AUD 0.0989
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2N7002DW H6327


Infineon Technologies MOSFET N-Ch 60V 300mA SOT-363-6
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Infineon 708
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AUD 0.0848
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
GS66508B-MR


MOSFET 650V 30A GaN E-mode GaNPX package Bottom-side cooling
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Gan Systems 703
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AUD 20.2433
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