MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RS1E150GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2627
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AUD 0.3284
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15 A30 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C3 WSmd/SmtHSOP - 8ReelSi1 Channel20 V10 nC   
IPQC60T022S7AXTMA1


MOSFETs AUTOMOTIVE_COOLMOS
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Infineon 721
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AUD 12.3955
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90 A600 V22 mOhmsN - Channel 4.5 V- 40 C+ 150 C416 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V150 nCEnhancement  
IRF510SPBF


MOSFET N-Chan 100V 5.6 Amp
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Vishay 721
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AUD 0.507
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5.6 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C43 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V8.3 nCEnhancement  
IPLT60R024CM8XTMA1


MOSFETs 600 V CoolMOS 8 Power Transistor
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Infineon 720
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AUD 8.1761
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103 A650 V24 mOhmsN - Channel 4.7 V- 55 C+ 150 C543 WSMD/SMTPG - HDSOP - 16 Si1 Channel20 V122 nCEnhancement CoolMOS
STP52N25M5


Trans MOSFET N-CH 250V 28A 3-Pin(3+Tab) TO-220 Tube
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STMicroelectronics 718
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AUD 3.5081
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28 A250 V55 mOhmsN - Channel 4 V  110 WThrough HoleTO - 220 - 3Tube  25 V47 nC   
2N7002KCW


SOT-323(SC-70) MOSFETs ROHS
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Yangjie 717
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AUD 0.026
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FDV303N-HXY


20V 2.3A 55mΩ@4.5V 1.2V null SOT-23 MOSFETs ROHS
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HXY MOS 717
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AUD 0.0326
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IRF9321TRPbF


MOSFET P Trench 30V 15A 2.4V @ 50uA 7.2 mΩ @ 15A,10V SOIC-8_150mil RoHS
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Infineon 714
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AUD 1.2994
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15 A30 V11.2 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V34 nC   
STF21N90K5


MOSFET N-Ch 900V 0.25 Ohm 18.5A SuperMESH 5
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STMicroelectronics 710
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AUD 2.6966
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18.5 A900 V299 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V43 nCEnhancement SuperMESH
NTLUS3A18PZCTCG


Trans MOSFET P-CH 20V 8.2A 6-Pin UDFN EP T/R
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ON Semiconductor 0
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AUD 0.45
Multiples of: 1

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