MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VB2290


MOSFET P Trench 20V 3.5A (Tc) 1.5V @ 250uA 85 mΩ @ 2.8A,4.5V SOT-23-3 RoHS
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VBsemi Elec 756
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AUD 0.1209
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20N06


TO-252 MOSFETs ROHS
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Juxing Electronic Technology 751
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AUD 0.0818
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20P03


TO-252 MOSFETs ROHS
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TECH PUBLIC 751
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AUD 0.1719
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WGP5N60SE


TO-220 MOSFETs ROHS
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Wild Goose 751
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AUD 0.185
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OSP80P06T


TO-220 MOSFETs ROHS
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OSEN 751
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AUD 0.2807
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AM20N06-90D-T1-PF-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 751
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AUD 0.3331
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IPB65R190CFDAATMA1


MOSFET N-Ch 650V 57.2A D2PAK-2
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Infineon 751
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AUD 2.791
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17.5 A650 V171 mOhmsN - Channel 3.5 V- 40 C+ 150 C151 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V68 nCEnhancement Coolmos
IRF2804STRL7PP


Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
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Infineon 751
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AUD 2.8123
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320 A40 V1.6 mOhmsN - Channel  - 55 C 330 WSmd/SmtD2PAKReelSi1 Channel20 V170 nCEnhancement  
FCPF9N60NT


N-Channel 600 V 9A (Tc) 29.8W (Tc) Through Hole TO-220F-3
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ON Semiconductor 750
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AUD 2.1343
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9 A600 V330 mOhmsN - Channel  - 55 C+ 150 C29.8 WThrough HoleTO - 220FP - 3TubeSi1 Channel    Supremos
NTP185N60S5H


MOSFET SUPERFET5 FAST 185MOHM TO220-3
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ON Semiconductor 750
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AUD 3.0045
Multiples of: 1

         Through HoleTO - 220 - 3        
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