MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR024NTRPBF-VB


60V 18.2A null TO-252 MOSFETs ROHS
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VBsemi Elec 759
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AUD 0.3528
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ASB70R380E


750V 11A 300m 83W 3.5V TO-263 MOSFETs ROHS
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ANHI 759
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AUD 0.7663
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FCP600N60Z


MOSFET 600V N-Channel MOSFET
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ON Semiconductor 759
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AUD 1.9045
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4.7 A650 V600 mOhmsN - Channel 3.5 V- 55 C+ 150 C89 WThrough HoleTO - 220TubeSi1 Channel 26 nC  Superfet Ii
IQE036N08NM6ATMA1


MOSFETs OptiMOS 6 n-channel power MOSFET 80 V
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Infineon 759
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AUD 1.8881
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           Reel , Cut TapeSi     OptiMOS
KIA2906A


MOSFET N Trench 60V 130A 4V @ 250uA 7 mΩ @ 50A,10V TO-220 (TO-220-3) RoHS
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KIA 758
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AUD 0.4262
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IPF012N06NF2SATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 758
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AUD 4.1209
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282 A60 V1.2 mOhmsN - Channel 2.1 V- 55 C+ 175 C250 WSMD/SMTTO - 263 - 7Reel , Cut TapeSi1 Channel- 20 V , 20 V155 nCEnhancement StrongIRFET
NX138AKHH


MOSFET MOSFET DISCRETES
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NXP 757
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AUD 0.0657
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260 mA60 V4.2 OhmsN - Channel 1.5 V- 55 C+ 150 C625 mWSMD/SMTDFN0606 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V400 pCEnhancement  
IRFS4010TRLPBF


Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
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Infineon 723
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AUD 2.5075
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            Hexfet®      
IPP029N15NM6AKSA1


MOSFETs TRENCH >=100V
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Infineon 649
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AUD 4.9746
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197 A150 V2.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
VBE5415


MOSFET N & P Channel 40V 50A 3V @ 250uA,30V @ 250uA 14mO @ 38A,10V TO252-4L RoHS
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VBsemi Elec 0
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AUD 0.5847
Multiples of: 1

                   
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