MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP0803QD


30V 20A 9mΩ@10V,10A 20W 2 N-Channel PMPAK(3x3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 756
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AUD 0.2418
Multiples of: 5

                   
AUB040N10


100V 176A 229W 3.7m 3V TO-263 MOSFETs ROHS
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ANHI 756
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AUD 0.698
Multiples of: 1

                   
AGM4005LLM1


40V 330A 305W 0.92m@10V,40A 1.8V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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AGM-Semi 756
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AUD 0.7588
Multiples of: 1

                   
STD3NK80Z-1


Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK
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STMicroelectronics 756
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AUD 0.8567
Multiples of: 1

2.5 A800 V4.5 OhmsN - Channel 4.5 V- 55 C+ 150 C70 WThrough HoleTO - 251 - 3TubeSi1 Channel- 30 V , 30 V19 nCEnhancement SuperMESH
HUF76423P3


MOSFET 20a 60V N-Channel 0.037Ohm
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ON Semiconductor 756
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AUD 1.1646
Multiples of: 1

35 A60 V25 mOhmsN - Channel  - 55 C+ 175 C85 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V Enhancement Ultrafet
IRF630STRRPBF


Vishay Semiconductors MOSFET N-Chan 200V 9.0 Amp
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Vishay 756
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AUD 1.21
Multiples of: 1

9 A200 V400 mOhmsN - Channel  - 55 C+ 150 C3 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
STF5N105K5


N-Channel 1050 V 3A (Tc) 25W (Tc) Through Hole TO-220 Full Pack
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STMicroelectronics 756
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AUD 2.0229
Multiples of: 1

3 A1050 V2.9 OhmsN - Channel 3 V- 55 C+ 150 C25 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V12.5 nCEnhancement Mdmesh
WMM26N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
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Wayon 756
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AUD 2.194
Multiples of: 1

            WMOS C4      
RJ1N10BBHTL1


MOSFETs Nch 80V 235A, TO-263AB, Power MOSFET
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ROHM 756
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AUD 5.9597
Multiples of: 1

235 A80 V2 mOhmsN - Channel 4 V- 55 C+ 150 C189 WSMD/SMTTO - 263AB - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V185 nCEnhancement  
IAUZN04S7N032ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 0
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AUD 0.614
Multiples of: 1

97 A40 V3.25 mOhmsN - Channel 3 V- 55 C+ 175 C58 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V16 nCEnhancement OptiMOS
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