MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTFS6H880NLWFTAG


MOSFET T8 80V LL U8FL
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ON Semiconductor 1250
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AUD 0.7093
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22 A80 V29 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSMD/SMT Cut Tape , ReelSi1 Channel- 20 V , + 20 V9 nCEnhancement  
WGF65R600


TO-220F MOSFETs ROHS
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Wild Goose 829
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AUD 0.437
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FDS6575


MOSFET SO-8 P-CH -20V
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ON Semiconductor 829
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AUD 0.8981
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10 A20 V13 mOhmsp - channel  - 55 C+ 175 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel8 V enhancement powertrench
NTMFS4852NT1G


MOSFET NFET SO8FL 30V 155A 2.1MO
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ON Semiconductor 829
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AUD 0.9734
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155 A30 V3.3 mOhmsN - Channel  - 55 C+ 150 C2.31 WSmd/SmtSO - 8FLReelSi1 Channel20 V    
IPB35N10S3L-26


Infineon Technologies MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
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Infineon 829
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AUD 1.5252
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35 A100 V26.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V30 nCEnhancementAec - Q101Optimos
SPA11N80C3XKSA1


Infineon Technologies MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
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Infineon 829
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AUD 1.7896
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11 A800 V390 mOhmsN - Channel 2.1 V- 55 C+ 150 C34 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V85 nCEnhancement Coolmos
IPP111N15N3GXKSA1


Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
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Infineon 829
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AUD 2.4291
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            Optimos 3      
RSJ300N10TL


ROHM Semiconductor MOSFET PWR MOSFET LOW RESIST DEVICE
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ROHM 828
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AUD 1.6746
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30 A100 V33 mOhmsN - Channel 1 V- 55 C+ 150 C50 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V50 nCEnhancement  
RX3G07CGNC16


N-Channel 40V 70A (Tc) 78W (Tc) Through Hole TO-220AB
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ROHM 828
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AUD 1.7657
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70 A40 V4.7 mOhmsN - Channel 1 V- 55 C+ 150 C78 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V32 nCEnhancement  
IRFB7537PBF


Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
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Infineon 805
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AUD 0.5776
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173 A60 V2.75 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V142 nC  Strongirfet
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