MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC077N12NS3 G


MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
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Infineon 885
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AUD 3.5406
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98 A120 V6.6 mOhmsN - Channel 2 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel20 V88 nCEnhancement Optimos
HSBA4400


PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 867
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AUD 0.4767
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IPB60R360CFD7ATMA1


650V 7A 43W 360mO@2.9A,10V N Channel TO-263-3-2 MOSFETs ROHS
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Infineon 867
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AUD 1.389
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           Cut Tape       
STB80NF55-08AG


MOSFET Automotive-grade N-channel 55 V, 6.5 mOhm typ., 80 A STripFET Power MOSFET in a D2PAK package
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STMicroelectronics 867
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AUD 2.1884
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--8 mOhms  ----Smd/SmtTO - 263 - 3 Si -- Aec - Q101Stripfet
CXDM3069N TR


MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
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Central Semiconductor 866
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AUD 0.4385
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6.9 A30 V50 mOhmsN - Channel  - 55 C+ 150 C1.2 WSmd/SmtSOT - 89Cut TapeSi1 Channel12 V11 nCEnhancement  
SIHF8N50L-E3


MOSFET 500V 8A 40W 1ohm @ 10V TO-220FP
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Vishay 866
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AUD 1.1049
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8 A500 V1 OhmsN - Channel 5 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3ReelSi1 Channel30 V22 nCEnhancement  
IRF9Z24PBF-BE3


P-Channel 60V 11A (Tc) 60W (Tc) Through Hole TO-220AB
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Vishay 865
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AUD 0.9981
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11 A60 V280 mOhmsP - Channel 4 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V19 nCEnhancement  
MOT1120T


100V 280A 286W 1.6m@10V,20A 4V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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MOT 865
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AUD 1.9994
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STB80NF55L-08-1


STMicroelectronics MOSFET N-Ch, 55V-0.0065ohms 80A
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STMicroelectronics 865
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AUD 2.397
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80 A55 V8 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeI2PAK - 3Tubesi1 channel16 V enhancement  
KNF6450B


TO-220F MOSFETs ROHS
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KIA 864
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AUD 0.4161
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