MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CI47N65D4


TO-247-3 MOSFETs ROHS
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Tokmas 864
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AUD 2.6003
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STB55NF06LT4


N-Channel 60 V 55A (Tc) 95W (Tc) Surface Mount D2PAK
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STMicroelectronics 862
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AUD 1.8298
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55 A60 V14 mOhmsn - channel  - 55 C+ 175 C95 Wsmd/smtD2PAKReelsi1 channel16 V enhancementaec - q101 
FDMS7556S


Fairchild Semiconductor MOSFET 25V N-Channel PowerTrench SyncFET
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ON Semiconductor 861
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AUD 2.25
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130 A25 V1.2 mOhmsN - Channel20 V - 55 C+ 150 C96 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V95 nC , 43 nC  Powertrench Syncfet
SPP80P06P H


MOSFET SIPMOS Power Transistor
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Infineon 861
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AUD 2.5612
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80 A60 V23 mOhmsP - Channel 2.1 V- 55 C+ 175 C340 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel- 10 V115 nCEnhancement Sipmos
STB23NM50N


Transistor: N-MOSFET; unipolar; 500V; 11A; 125W; D2PAK
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STMicroelectronics 861
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AUD 2.6328
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TK065U65Z,RQ


MOSFET PWR MOS PD=270W F=1MHZ
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Toshiba 860
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AUD 8.932
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38 A650 V51 mOhmsN - Channel 4 V- 55 C+ 150 C270 WSMD/SMT2 - 10AF1A - 9Cut Tape , ReelSi1 Channel- 30 V , + 30 V62 nCEnhancement  
CSD19533KCS


MOSFET 100V 8.7mOhm N-CH Pwr MOSFET
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Texas Instruments 857
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AUD 1.4836
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100 A100 V10.5 mOhmsN - Channel 2.8 V- 55 C+ 175 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V27 nCEnhancement Nexfet
IRFS7734TRL7PP


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 507
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AUD 2.9618
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197 A75 V3.05 mOhmsN - Channel 3.7 V- 55 C+ 175 C294 WSmd/SmtTO - 263 - 7Cut TapeSi1 Channel20 V180 nCEnhancement Strongirfet
FCH070N60E


Fairchild Semiconductor MOSFET
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ON Semiconductor 26
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AUD 4.7256
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52 A600 V70 mOhmsN - Channel 2.5 V- 55 C+ 150 C481 WThrough HoleTO - 247 - 3ReelSi1 Channel+/- 20 v , +/- 30 V128 nCEnhancement Superfet Ii
STFH18N60M2


MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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STMicroelectronics 3
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AUD 1.704
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13 A600 V255 mOhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 25 V21.5 nCEnhancement Mdmesh
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