MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPNCE01P30K


TO-252-3L MOSFETs ROHS
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TECH PUBLIC 5937
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AUD 0.65
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OSPF65R650


650V 7A 28W 550m TO-220F MOSFETs ROHS
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OSEN 902
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AUD 0.4638
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IRFI510GPBF


MOSFET N-Chan 100V 4.5 Amp
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Vishay 902
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AUD 0.9612
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4.5 A100 V540 mOhmsN - Channel 2 V- 55 C+ 175 C27 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel10 V8.3 nCEnhancement  
IRFSL3206PBF


Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
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Infineon 902
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AUD 1.9537
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210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 262TubeSi1 Channel20 V120 nC   
STP21N90K5


Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; TO220-3
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STMicroelectronics 902
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AUD 4.6226
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            Supermesh      
STD14NM50NAG


MOSFET Automotive-grade N-channel 500 V 0.28 Ohm typ. 12 A MDmesh II Power MOSFET in a DPAK package
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STMicroelectronics 901
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AUD 1.297
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12 A500 V280 mOhmsN - Channel 2 V + 150 C90 WSmd/SmtTO - 252 - 3 Si1 Channel25 V27 nC Aec - Q101Mdmesh
FQB5N90TM


Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
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ON Semiconductor 901
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AUD 2.0407
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5.4 A900 V2.3 OhmsN - Channel 3 V- 55 C+ 150 C3.13 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V40 nCEnhancement  
TK31A60W,S4VX


Toshiba MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC
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Toshiba 901
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AUD 2.7931
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30.8 A600 V73 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V86 nCEnhancement  
IPT65R025CM8XTMA1


MOSFETs 650V CoolMOS CM8 Power Transistor
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Infineon 901
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AUD 9.2104
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101 A650 V25 mOhmsN - Channel 4.7 V- 55 C+ 150 C543 WSMD/SMTPG - HSOF - 8Reel , Cut TapeSi1 Channel- 20 V to + 20 V124 nCEnhancement CoolMOS
IRF830


500V 5A 38W 1.25@10V,2.5A 3.3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Minos 896
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AUD 0.214
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