MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR430ATRPBF


MOSFET N-Chan 500V 5.0 Amp
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Vishay 909
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AUD 0.8779
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
FDPF10N50UT


MOSFET 500V 8A N-Chan UniFET
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ON Semiconductor 909
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AUD 1.4546
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8 A500 V850 mOhmsN - Channel 5 V  42 WThrough HoleTO - 220TubeSi1 Channel30 V18 nC  Unifet Frfet
PHB18NQ10T,118


MOSFET TRENCH-100
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Nexperia 909
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AUD 1.7496
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18 A100 V90 mOhmsn - channel  - 55 C+ 175 C79 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V enhancement  
AUIRF7341QTR


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms
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Infineon 907
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AUD 2.5191
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5.1 A55 V65 mOhmsN - Channel20 V - 55 C 2.4 WSmd/SmtSOIC - 8ReelSi2 Channel20 V29 nCEnhancementAec - Q101 
AIMBG75R040M1HXTMA1


MOSFETs Y
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Infineon 907
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AUD 9.0791
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           Reel , Cut TapeSi     CoolSiC
SK3401DM


30V 44mΩ@10V,0.5A 1V@250uA 2 P-Channel SOT23-6 MOSFETs ROHS
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Shikues 906
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AUD 0.137
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AO4410


SOP-8 MOSFETs ROHS
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TECH PUBLIC 906
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AUD 0.1519
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MOT3145J


30V 85A 31W 3.6m@10V,20A 2.1V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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MOT 906
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AUD 0.2335
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CSD17585F5


MOSFET 30-V, N channel NexFET power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 902
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AUD 0.1771
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5.9 A30 V27 mOhmsN - channel 900 mV- 55 C+ 150 C1.4 WSmd/smtPICOSTAR - 3Cut TapeSi1_Channel20 V5.1 nCEnhancement  
SPB18P06P G


MOSFET P-CH 60V 18.6A
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Infineon 6
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AUD 0.7519
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18.7 A60 V130 mOhmsP - Channel 2.1 V- 55 C+ 175 C81.1 WSmd/SmtTO - 263ReelSi1 Channel- 10 V- 21 nCEnhancement Sipmos
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