MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSU5N65F


TO-220F MOSFETs ROHS
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REASUNOS 906
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AUD 0.2527
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SSM6J771G,LF


MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm
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Toshiba 906
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AUD 0.4088
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- 5 A- 20 V26 mOhmsP - Channel12 V- 1.2 V- 55 C+ 150 C5 WSmd/SmtWCSP - 6ReelSi2 Channel12 V9.8 nC   
NTGS5120PT1G-VB


60V 7A N Channel SOT23-6 MOSFETs ROHS
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VBsemi Elec 905
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AUD 0.3699
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R6515KNX3C16


MOSFET 650V MOSFET
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ROHM 905
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AUD 2.594
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15 A650 V315 mOhmsN - Channel 5 V- 55 C+ 150 C161 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , 20 V27.5 nCEnhancement  
SQ4940AEY-T1_GE3


MOSFET 40V 8A 4W AEC-Q101 Qualified
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Vishay 905
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AUD 1.0282
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8 A40 V24 mOhmsN - Channel 2 V- 55 C+ 175 C4 WSmd/SmtSOIC - 8ReelSi2 Channel20 V28.4 nCEnhancementAec - Q101Trenchfet
STFH13N60M2


MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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STMicroelectronics 905
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AUD 1.806
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11 A600 V350 mOhmsN - Channel 2 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 25 V17 nCEnhancement Mdmesh
IPB65R190C7ATMA2


Infineon HIGH POWER_NEW
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Infineon 904
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AUD 2.3962
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AUIRF1405ZS-7TRL


MOSFET N-CHANNEL 55 / 60
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Infineon 904
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AUD 3.7115
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150 A55 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C230 WSmd/SmtTO - 263 - 7Cut TapeSi1 Channel20 V230 nCEnhancementAec - Q101 
NVMFS5C404NLWFT1G


ON Semiconductor MOSFET NFET SO8FL 40V 373A 750MO
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ON Semiconductor 890
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AUD 5.1552
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370 A40 V520 uOhmsN - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - FL - 8ReelSi1 Channel20 V181 nCEnhancementAec - Q101 
IPB17N25S3-100


MOSFET N-Ch 250V 17A D2PAK-2
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Infineon 614
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AUD 1.6582
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17 A250 V85 mOhmsn - channel 3 V- 55 C+ 175 C107 Wsmd/smtTO - 252 - 3Reelsi1 channel10 V14 nCenhancementaec - q101 
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