MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW65R018CM8XKSA1


MOSFETs 650V CoolMOS CM8 Power Transistor
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Infineon 1386
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AUD 15.006
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116 A650 V18 mOhmsN - Channel 4.7 V- 55 C+ 150 C521 WThrough HolePG - TO247 - 3TubeSi1 Channel- 20 V to + 20 V173 nCEnhancement CoolMOS
Hot IPP041N12N3GXKSA1


Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
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Infineon 921
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AUD 3.8254
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            Optimos 3      
SIHB075N65E-GE3


MOSFETs N-CHANNEL 650V
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Vishay 921
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AUD 4.3836
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40 A650 V65 mOhmsN - Channel 5 V- 55 C+ 150 C250 WThrough HoleTO - 220AB - 3 Si1 Channel+ 30 V132 nCEnhancement  
STF20N95K5


MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5
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STMicroelectronics 921
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AUD 4.8069
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17.5 A950 V330 mOhmsN - Channel    40 WThrough HoleTO - 220 - 3TubeSi1 Channel 40 nC  Mdmesh
FCPF150N65F


MOSFET SuperFET2 150 mOhm 650V FRFET
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ON Semiconductor 921
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AUD 5.1881
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24 A650 V150 mOhmsN - Channel 3 V- 55 C+ 150 C39 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V94 nCEnhancement  
Si5419DU-T1-GE3


MOSFET 30V 12A 31W 20mohm @ 10V
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Vishay 919
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AUD 0.3572
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12 A30 V33 mOhmsP - Channel 2.5 V- 55 C+ 150 C31 WSMD/SMTCHIP - FET - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V45 nCEnhancement TrenchFET
IRF740LCPBF


N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 919
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AUD 0.9356
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           TubeSi      
STB80NF55-06-1


STMicroelectronics MOSFET N-Ch, 55V-0.005ohms 80A
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STMicroelectronics 919
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AUD 2.2657
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80 A55 V6.5 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeI2PAK - 3Tubesi1 channel20 V enhancementaec - q101stripfet
R5016FNJTL


ROHM Semiconductor MOSFET
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ROHM 919
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AUD 3.497
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16 A500 V250 mOhmsN - Channel 3 V- 55 C+ 150 C255 WSmd/SmtTO - 263 - 3ReelSi1 Channel30 V46 nCEnhancement  
IRFI9520GPBF


P-Channel 100 V 5.2A (Tc) 37W (Tc) Through Hole TO-220-3
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Vishay 909
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AUD 1.7731
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