MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHP065N60E-BE3


MOSFET N-CHANNEL 600V
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Vishay 919
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AUD 8.5192
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40 A600 V57 mOhmsN - Channel 3 V- 55 C+ 150 C250 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V74 nCEnhancement  
RQ3E100GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 918
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AUD 0.2118
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10 A30 V11.7 mOhmsN - Channel20 V2.5 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V7.9 nC   
IPB80P04P4L04ATMA1(TOKMAS)


40V 80A 125W 4.4m@80A 1PCSPChannel TO-263-3 MOSFETs ROHS
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Tokmas 918
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AUD 0.7405
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S150N10T


TO-220 MOSFETs ROHS
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HL 918
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AUD 0.7663
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STI6N90K5


MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an I2PAK package
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STMicroelectronics 918
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AUD 1.256
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6 A900 V910 mOhmsN - Channel 3 V- 55 C+ 150 C110 WThrough HoleTO - 262 - 3 Si1 Channel30 V11 nCEnhancement Mdmesh
RX2L07BBGC7G


MOSFETs Discrete Semiconductors, MOSFETs, Nch 60V 80A, TO-220FP, Power MOSFET
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ROHM 918
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AUD 1.8716
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80 A60 V4.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C52 WThrough HoleTO - 220FM - 3TubeSi1 Channel20 V47 nCEnhancement  
IPB120P04P4L-03


Infineon Technologies MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
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Infineon 918
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AUD 6.9013
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- 120 A- 40 V3.1 mOhmsP - Channel20 V1.2 V- 55 C+ 175 C136 WSmd/SmtD2PAK - 3ReelSi1 Channel- 4.5 V180 nCEnhancementAec - Q101Optimos
DMT8012LK3-13


MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
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Diodes Incorporated 917
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AUD 0.6403
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel     
STF10NM60ND


MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
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STMicroelectronics 917
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AUD 1.6746
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8 A650 V600 mOhmsn - channel  - 55 C+ 150 C25 Wthrough holeTO - 220 - 3 FPTubesi1 channel25 V    
IPA60R170CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 917
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AUD 1.9866
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8 A600 V144 mOhmsN - Channel 3.5 V- 55 C+ 150 C26 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V28 nCEnhancement Coolmos
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