MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR220NTRLPBF


Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
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Infineon 931
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AUD 0.4302
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5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
IRL3705ZLPBF


MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl
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Infineon 930
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AUD 1.7896
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86 A55 V12 mOhmsN - Channel    130 WThrough HoleTO - 262TubeSi1 Channel16 V40 nC   
STL17N65M5


STMicroelectronics MOSFET
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STMicroelectronics 929
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AUD 1.7731
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10 A650 V374 mOhmsN - Channel25 V4 V- 55 C+ 150 C70 WSmd/SmtPowerflat - 4    22 nCEnhancement  
FDZ375P


P-Channel 20 V 3.7A (Ta) 1.7W (Ta) Surface Mount 4-WLCSP (1x1)
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ON Semiconductor 929
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AUD 2.4238
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3.7 A20 V143 mOhmsP - Channel 1.2 V + 150 C1.7 WSmd/SmtWLCSP - 4ReelSi1 Channel8 V15 nC  Powertrench
STP15NM65N


STMicroelectronics MOSFET N-Channel 650V Pwr Mosfet
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STMicroelectronics 929
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AUD 2.7418
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15.5 A650 V270 mOhmsn - channel25 V - 55 C+ 150 C150 Wthrough holeTO - 220 - 3Tubesi1 channel25 V enhancement  
PSMNR90-80ASFJ


MOSFETs SOT8000 N CHAN 80V
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Nexperia 928
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AUD 8.8786
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505 A80 V850 uOhmsN - Channel 4 V- 55 C+ 175 C1.55 kWSMD/SMTSOT8000A - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V309 nCEnhancement  
IXFH400N075T2


MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 400A
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IXYS 928
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AUD 18.5687
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400 A75 V2.3 mOhmsn - channel 4 V- 55 C+ 175 C1 kWthrough holeTO - 247 - 3Tubesi 20 V420 nCenhancement hiperfet
STQ1HN60K3-AP


STMicroelectronics MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
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STMicroelectronics 927
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AUD 0.4318
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400 mA600 V6.7 Ohmsn - channel 3.75 V- 55 C+ 150 C3 Wthrough holeTO - 92 - 3Ammo Packsi1 channel30 V9.5 nCenhancement supermesh
MOT15N50HF


TO-220F MOSFETs ROHS
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MOT 927
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AUD 0.4981
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TK12E60W,S1VX(S


TO-220-3 MOSFETs ROHS
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Toshiba 735
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AUD 1.3343
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