MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR3103TRPBF-VB


30V 80A null TO-252 MOSFETs ROHS
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VBsemi Elec 940
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AUD 0.32
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STF6N95K5


Transistor: N-MOSFET; unipolar; 950V; 6A; 90W; TO220FP
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STMicroelectronics 936
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AUD 1.108
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            Mdmesh      
R6010YNX3C16


MOSFETs 600V 10A TO-220AB, High-speed switching Power MOSFET
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ROHM 936
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AUD 1.9866
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10 A600 V390 mOhmsN - Channel 6 V- 55 C+ 150 C92 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V15 nCEnhancement  
FDC6401N


mosfet 2 n channel (dual) 20v 3a 1.5v @ 250ua 70 m @ 3a,4.5v sot-23-6 rohs
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ON Semiconductor 935
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AUD 0.3965
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IRLR9343TRPBF-VB


60V 25A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 935
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AUD 0.5408
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Hot IRFB3407ZPBF


MOSFET TRENCH MOSFET - PACKAGE
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Infineon 935
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AUD 2.0966
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122 A75 V5 mOhmsN - Channel 2 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V110 nCEnhancement  
NX138BKWX


MOSFET NX138BKW/SC-70/REEL 7" Q1/T1 *
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Nexperia 841
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AUD 0.0443
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           Cut TapeSi      
BSC022N04LS6


MOSFET TRENCH <= 40V
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Infineon 475
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AUD 1.8503
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FQI8N60CTU


MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 0
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AUD 1.3134
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7.5 A600 V1.2 Ohmsn - channel  - 55 C+ 150 C3.13 Wsmd/smtTO - 263Tubesi1 channel30 V enhancement  
IPB100N10S305ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 0
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AUD 1.3856
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