MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJD80N03B


30V 80A 4.2mO@10V,20A 45W N Channel TO-252 MOSFETs ROHS
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Yangjie 931
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AUD 0.1771
Multiples of: 5

                   
HSP10P20


TO-220 MOSFETs ROHS
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HUASHUO 931
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AUD 0.5442
Multiples of: 1

                   
FDPF7N50U_G


Fairchild Semiconductor MOSFET
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ON Semiconductor 931
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AUD 1.7596
Multiples of: 1

5 A500 V1.5 OhmsN - Channel30 V5 V- 55 C+ 150 C31.3 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V12.8 nC   
TC6320K6-G


N and P channel enhancement mode MOSFET pair - 200V – DFN 8 - 37,400 mg - Low threshold - ...
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Microchip 931
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AUD 2.3507
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1 A200 V7 Ohms , 8 OhmsN And P - Channel 1 V- 55 C+ 150 C Smd/SmtDFN - 8ReelSi2 Channel10 v , - 10 V Enhancement  
R6006JNXC7G


N-Channel 600 V 6A (Tc) 43W (Tc) Through Hole TO-220FM
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ROHM 931
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AUD 2.5108
Multiples of: 1

6 A600 V936 mOhmsN - Channel 5 V- 55 C+ 150 C43 WThrough HoleTO - 220FM - 3TubeSi1 Channel30 V15.5 nCEnhancement  
YJP200G06A


TO-220 MOSFETs ROHS
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Yangjie 930
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AUD 0.8976
Multiples of: 1

                   
RD3S075CNTL1


MOSFET Nch 190V 7.5A TO-252 (DPAK)
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ROHM 930
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AUD 1.2067
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7.5 A190 V336 mOhmsN - Channel 500 mV- 55 C+ 150 C52 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V30 nCEnhancement  
AON6508-HXY


30V 150A 2m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 926
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AUD 0.4538
Multiples of: 1

                   
WSF3038


MOSFET N Trench 30V 38A (Tc) 2.5V @ 250uA 20 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Winsok 911
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AUD 0.1386
Multiples of: 5

                   
SP40N01GHTO


40V 230A 1.1m 1 N-Channel TOLL MOSFETs ROHS
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Siliup 909
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AUD 0.6984
Multiples of: 1

                   
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