MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFU120NPBF


MOSFET N Trench 100V 9.4A 4V @ 250uA 210 mΩ @ 5.6A,10V TO-251 (I-PAK) RoHS
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Infineon 944
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AUD 0.4368
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            Hexfet®      
APM4050PUC-TRL-VB


40V 50A P Channel TO-252 MOSFETs ROHS
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VBsemi Elec 942
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AUD 0.5454
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Hot SIHP12N50C-E3


MOSFET N-Channel 500V
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Vishay 939
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AUD 1.1243
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12 A500 V555 mOhmsN - Channel 5 V- 55 C+ 125 C208 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V32 nCEnhancement  
STI76NF75


MOSFET POWER MOSFET
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STMicroelectronics 937
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AUD 1.7403
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80 A75 V9.5 mOhmsn - channel 2 V- 55 C+ 175 C300 Wthrough holeTO - 262 - 3 si1 channel20 V160 nCenhancementaec - q101 
SWD7N60D


600V 7A 1.05Ω TO-252 MOSFETs ROHS
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Sam&wing 937
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AUD 0.3393
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IRF7241TR


40V 16.1A 10mO@10V,16.1A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 926
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AUD 0.4368
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IPB029N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
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Infineon 915
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AUD 1.5733
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            Optimos 3      
HYG200P10LR1P


100V 80A 20mΩ@10V,40A 214W 1.8V@250uA 91pF@50V P Channel 11.52nF@50V 83nC@10V +175℃@(Tj) TO-220FB-3L MOSFETs ROHS
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HuaYi 739
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AUD 0.8574
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RJP020N06T100


60V 2A 165mO@4.5V,2A 500mW N Channel SOT-89-3 MOSFETs ROHS
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ROHM 645
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AUD 0.2769
Multiples of: 5

   N - Channel     Through HoleMPT3Reel       
SQ2318CES-T1_GE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 271
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AUD 0.1872
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7 A40 V31 mOhmsN - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3 Si1 Channel- 20 V , + 20 V8.9 nCEnhancement  
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