MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP0116K


TO-252 MOSFETs ROHS
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NCE Power 1052
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AUD 0.2212
Multiples of: 5

                   
FDD8770


Fairchild Semiconductor MOSFET LOW VOLTAGE
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ON Semiconductor 943
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AUD 0.6534
Multiples of: 1

35 A25 V3.3 mOhmsN - Channel20 V - 55 C+ 175 C115 WSmd/SmtDPAK - 3Reel    Enhancement  
STI24NM60N


STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II MOS
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STMicroelectronics 943
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AUD 3.4572
Multiples of: 1

17 A600 V168 mOhmsN - Channel     Through HoleI2PAK - 3TubeSi1 Channel    Mdmesh
RX2G10BBGC7G


MOSFETs RX2G10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
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ROHM 943
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AUD 4.3672
Multiples of: 1

205 A40 V1.47 mOhmsN - Channel 2.5 V- 55 C+ 150 C100 WThrough HoleTO - 220FM - 3TubeSi1 Channel20 V210 nCEnhancement  
FDPC8013S


MOSFET Low Power Two-Input Logic Gate TinyLogic
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ON Semiconductor 942
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AUD 1.251
Multiples of: 1

10 A , 22 A30 V9.6 mOhms , 2.7 mOhmsn - channel 1.5 v , 1.7 V- 55 C+ 150 C2 Wsmd/smtPOWER33 - 8Reelsi2 channel20 V13 nC , 44 nC  powertrench power clip
FCPF850N80Z


MOSFET SuperFET2 800V 850 mOhm Zener
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ON Semiconductor 941
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AUD 2.6597
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6 A800 V850 mOhmsN - Channel20 V4.5 V- 55 C+ 150 C28.4 WThrough HoleTO - 220F - 3TubeSi1 Channel20 V22 nC  Superfet Ii
MMBF0201NL-HXY


20V 2.3A 48m 1PCSNChannel SOT-23 MOSFETs ROHS
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HXY MOS 940
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AUD 0.0512
Multiples of: 10

                   
PJM10H10NSC


100V 10A 1.2W 110m@10V,5A 2.5V@250uA 1 N-Channel SOT-23-3 MOSFETs ROHS
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Pingjingsemi 940
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AUD 0.0818
Multiples of: 5

                   
AGM204AP


PDFN-8(3.3x3.3) MOSFETs ROHS
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AGM-Semi 921
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AUD 0.1697
Multiples of: 5

                   
IQDH45N04LM6ATMA1


MOSFETs N
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Infineon 845
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AUD 2.6104
Multiples of: 1

637 A40 V450 uOhmsN - Channel 2.3 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V62 nCEnhancement  
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