MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BRCS3205RA


MOSFET N Trench 55V 110A (Tc) 4V @ 250uA 8 mΩ @ 90A,10V TO-220 RoHS
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Blue Rocket 970
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AUD 1.0814
Multiples of: 1

                   
BSC360N15NS3GATMA1


MOSFET MV POWER MOS
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Infineon 970
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AUD 1.166
Multiples of: 1

   N Channel       Reel       
STB9NK50ZT4


MOSFET N-Ch 500 Volt 7.2 A Zener SuperMESH
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STMicroelectronics 970
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AUD 1.1862
Multiples of: 1000

7.2 A500 V850 mOhmsN - Channel  - 55 C+ 150 C110 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V Enhancement Supermesh
TN0610N3-G


Transistor: N-MOSFET; unipolar; 100V; 3A; 1W; TO92
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Microchip 970
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AUD 1.306
Multiples of: 1000

500 mA100 V1.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
STP5NK60Z


MOSFET N-Ch 600 Volt 5 Amp
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STMicroelectronics 970
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AUD 1.3276
Multiples of: 1000

5 A600 V1.6 OhmsN - Channel30 V - 55 C+ 150 C90 WThrough HoleTO - 220 - 3Tube    Enhancement  
STP5N52K3


MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3
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STMicroelectronics 970
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AUD 1.3809
Multiples of: 1

4.4 A525 V1.5 OhmsN - Channel3 V4.5 V- 55 C+ 150 C70 WThrough HoleTO - 220 - 3Tube   14 nC   
CSD18537NKCS


MOSFET 60V N-Channel NexFET Pwr MOSFET
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Texas Instruments 960
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AUD 1.3039
Multiples of: 1

56 A60 V14 mOhmsN - Channel 2.6 V- 55 C+ 150 C94 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V14 nCEnhancement Nexfet
NVMFS6H818NT1G


MOSFET TRENCH 8 80V NFET
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ON Semiconductor 0
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AUD 2.1584
Multiples of: 1500

123 A80 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C136 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V9 nCEnhancement  
SIHA11N80E-GE3


MOSFET 650V Vds 30V Vgs TO-247AD
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Vishay 0
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AUD 2.972
Multiples of: 1

12 A800 V380 mOhmsN - Channel 4 V- 55 C+ 150 C34 WThrough HoleTO - 220FP - 3TubeSi1 Channel30 V88 nCEnhancement  
IRFI530GPBF


MOSFET RECOMMENDED ALT 844-IRFI530GPBF
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Vishay 0
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AUD 0.9477
Multiples of: 1

  160 mOhms        TubeSi      
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