MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSF4N90M


MOSFET N Channel 900V 4A(Tc) 5V @ 250uA 4.2O @ 2A,10V TO-220F RoHS
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Truesemi 970
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AUD 0.4773
Multiples of: 1

                   
FDS86242


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 970
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AUD 0.5224
Multiples of: 1

20 A150 V56.3 mOhmsN - Channel 4 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel20 V4.9 nC  Powertrench
IRF710PBF-BE3


N-Channel 400V 2A (Tc) 36W (Tc) Through Hole TO-220AB
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Vishay 970
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AUD 0.606
Multiples of: 1000

2 A400 V3.6 OhmsN - Channel 4 V- 55 C+ 150 C36 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V17 nCEnhancement  
IRFU9014PBF


P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA
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Vishay 970
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AUD 0.6269
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   P Channel      TO - 251 - 3Tube       
DMT6009LCT


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 970
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AUD 0.6532
Multiples of: 50

         Through HoleTO - 220 - 3TubeSi      
ZVN4525ZTA


Diodes Incorporated MOSFET N-Chnl 250V
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Diodes Incorporated 970
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AUD 0.6576
Multiples of: 1000

240 mA250 V9.5 OhmsN - Channel40 V - 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3Reel    Enhancement  
FQP4N20L


Fairchild Semiconductor MOSFET 200V N-Ch QFET Logic Level
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ON Semiconductor 970
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AUD 0.6614
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3.8 A200 V1.35 OhmsN - Channel20 V - 55 C+ 150 C45 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Qfet
BSP613PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
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Infineon 970
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AUD 0.6996
Multiples of: 1000

            Sipmos      
ZXMN6A11ZTA


N-Channel 60 V 2.7A (Ta) 1.5W (Ta) Surface Mount SOT-89-3
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Diodes Incorporated 682
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AUD 0.9815
Multiples of: 1

3.6 A60 V120 mOhmsN - channel 1 V- 55 C+ 150 C2.6 WSmd/smtSOT - 89ReelSi1 Channel10 V5.7 nCEnhancement  
BSP126,115


250V 375mA 5O@10V,300mA 1.5W N Channel SOT-223-4 MOSFETs ROHS
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Nexperia 2
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AUD 0.7937
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 223Reel       
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