MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF1018EPBF


Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
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Infineon 1165
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AUD 0.8513
Multiples of: 1

79 A60 V7.5 mOhmsN - Channel    110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V46 nC   
Hot IRF830SPBF


MOSFET N-Chan 500V 4.5 Amp
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Vishay 970
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AUD 0.7321
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
ZXMP10A17GTA


MOSFET 100V P-Chnl UMOS
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Diodes Incorporated 970
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AUD 0.7379
Multiples of: 1000

1.6 A100 V450 mOhmsP - Channel  - 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V Enhancement  
2SK3818-DL-E


2SK3818-DL-E
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ON Semiconductor 970
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AUD 0.745
Multiples of: 1

                   
STP16N50M2


STMicroelectronics MOSFET
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STMicroelectronics 970
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AUD 0.7463
Multiples of: 50

13 A500 V280 mOhmsN - Channel25 V3 V- 55 C+ 150 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V19.5 nCEnhancement Mdmesh
IRF520PBF-BE3


MOSFET 100V N-CH
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Vishay 970
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AUD 0.7649
Multiples of: 1000

9.2 A100 V270 mOhmsN - Channel 4 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
IRF9510PBF-BE3


P-Channel 100V 4A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 970
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AUD 0.7826
Multiples of: 1000

4 A100 V1.2 OhmsP - Channel 4 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V8.7 nCEnhancement  
4N80L-TA3-T


TO-220 MOSFETs ROHS
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Unisonic 970
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AUD 0.7985
Multiples of: 1

                   
SPB03N60C3ATMA1


Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) D2PAK T/R
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Infineon 970
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AUD 0.808
Multiples of: 1

3.2 A  n    38 Wsurface mount Tape And Reel    enhancement  
FDPF5N50NZF


MOSFET 500V N-Channel UniFET-II
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ON Semiconductor 0
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AUD 0.8263
Multiples of: 1

4.2 A500 V1.57 OhmsN - Channel 5 V- 55 C+ 150 C30 WThrough HoleTO - 220FTubeSi1 Channel25 V9 nC  Unifet
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