MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMB055N08NS1_R2_00601


MOSFETs 80V 5.5mohm MV MOSFET
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Panjit 1007
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AUD 1.0261
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108 A80 V5.5 mOhmsN - Channel 3.75 V- 55 C+ 150 C113.6 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V65.8 nCEnhancement  
MOT1126T


100V 280A 286W 2.2m@10V,20A 4V@250uA 1PCSNChannel TOLL-8 MOSFETs ROHS
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MOT 1007
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AUD 1.8032
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IXTH10P50P


MOSFET -10.0 Amps -500V 1.000 Rds
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IXYS 1007
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AUD 8.6358
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10 A500 V1 OhmsP - Channel 4 V- 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V50 nCEnhancement  
QS6J3TR


MOSFET 2P-CH 20V 1.5A
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ROHM 1006
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AUD 0.3969
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1.5 A20 V215 mOhmsP - Channel    1.25 WSmd/SmtT SMT - 5ReelSi2 Channel12 V Enhancement  
WMK05N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 4A; 45W
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Wayon 1006
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AUD 1.0427
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            Sj - Mosfet M3      
FDMS86101A


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 1005
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AUD 2.8844
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13 A100 V8 mOhmsN - Channel  - 55 C+ 150 C104 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench
IPB038N15NM6ATMA1


MOSFETs OptiMOS 6 power MOSFET 150 V normal level in DPAK 3-pin package
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Infineon 1003
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AUD 3.2343
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156 A150 V3.6 mOhmsN - Channel 4 V- 55 C+ 175 C294 WSMD/SMT Reel , Cut TapeSi1 Channel+ 20 V69 nCEnhancement OptiMOS
IPP60R037CM8XKSA1


MOSFETs HIGH POWER_NEW
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Infineon 960
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AUD 5.6313
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70 A600 V37 mOhmsN - Channel 4.7 V- 55 C+ 150 C390 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V79 nCEnhancement CoolMOS
DMP4015SPSQ-13


MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W
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Diodes Incorporated 355
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AUD 0.5571
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- 8.5 A- 40 V15 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.3 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel25 V47.5 nCEnhancementAec - Q101 
ZXMS6005SGTA


MOSFET 60V N-Ch FET FET 2A 480mJ Enh
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Diodes Incorporated 3
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AUD 0.8944
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2 A65 V250 mOhmsN - channel5 V - 40 C+ 125 C1.6 WSmd/smtSOT - 223 - 3ReelSi1 Channel5 V Enhancement Intellifet
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