MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KIA2305


MOSFET P Trench 20V 3.5A 1V @ 250uA 55 mΩ @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
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KIA 1003
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AUD 0.0733
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TPH11006NL,LQ


MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET
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Toshiba 1001
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AUD 0.6394
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40 A60 V17 mOhmsN - Channel 2.5 V  34 WSmd/SmtSOP - ADVANCE - 8Cut TapeSi1 Channel20 V23 nCEnhancement  
IPD90N04S4-02


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 1001
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AUD 1.1542
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90 A40 V2.4 mOhmsN - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel   Aec - Q101Optimos
IRFU420APBF


MOSFET N-Chan 500V 3.3 Amp
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Vishay 1001
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AUD 1.2149
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   N - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
FDB088N08


MOSFET NCH 75V 8.8Mohm
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ON Semiconductor 1001
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AUD 1.9866
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85 A75 V7.3 mOhmsN - Channel  - 55 C+ 175 C160 WSmd/SmtD2PAKReelSi1 Channel20 V Enhancement Powertrench
MDD10N65F


650V 10A 810mΩ@VGS=10V null TO-220F MOSFETs ROHS
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Microdiode Electronics 1000
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AUD 0.5747
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PSMN1R7-30YL,115


MOSFET <=30V N CH TRENCHFET
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Nexperia 1000
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AUD 0.9933
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100 A30 V1.7 mOhmsN - Channel  - 55 C+ 150 C109 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel20 V Enhancement  
RBA200N15YAPF-6UA03#KB0


MOSFETs Auto. MOS REXFET-1 150V 3.4mohm TOLT
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Renesas 1000
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AUD 6.9119
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200 A150 V3.4 mOhmsN - Channel 4 V   SMD/SMT Reel , Cut TapeSi  96 nCEnhancement  
PSMN1R0-100ASFJ


MOSFETs SOT8000 100V 460A
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Nexperia 1000
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AUD 8.8943
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460 A100 V990 uOhmsN - Channel 4 V- 55 C+ 175 C1.55 kWSMD/SMTSOT8005A - 12Reel , Cut TapeSi1 Channel- 20 V , + 20 V359 nCEnhancement  
FCP650N80Z


MOSFET 800V 10A NChn MOSFET SuperFET II
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ON Semiconductor 0
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AUD 2.542
Multiples of: 1

10 A800 V530 mOhmsN - Channel 2.5 V- 55 C+ 150 C162 WThrough HoleTO - 220 - 3BulkSi1 Channel+/- 20 v , +/- 30 V35 nCEnhancement Superfet Ii
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