MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJQ62G06A


DFN3333-8L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie 1020
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AUD 0.4016
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AOSS21319C


Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
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Alpha & Omega 998
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AUD 0.4223
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IRFBC40PBF-BE3


N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 998
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AUD 1.2719
Multiples of: 1

6.2 A600 V1.2 OhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V60 nCEnhancement  
IPB60R060C7ATMA1


MOSFET HIGH POWER_NEW
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Infineon 998
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AUD 6.4851
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 600 V       Smd/SmtTO - 263 - 3Cut TapeSi     Coolmos
DMP3015LSS-13


Diodes Incorporated MOSFET P-Channel 2.5W
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Diodes Incorporated 997
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AUD 0.6157
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- 13 A- 30 V11 mOhmsP - Channel20 V- 2 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8ReelSi1 Channel20 V60.4 nCEnhancement  
DMP3010LK3Q-13


MOSFET P-Ch Enh Mode FET 30V 20Vgs
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Diodes Incorporated 997
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AUD 0.7979
Multiples of: 1

17 A30 V8 mOhmsP - Channel 1.1 V- 55 C+ 150 C3.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V59.2 nCEnhancementAec - Q101 
SH8ME5TB1


MOSFETs SH8ME5 is a low on-resistance MOSFET ideal for switching applications. This product includes two 100V MOSFETs in a small surface mount package (SOP8).
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ROHM 997
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AUD 1.4316
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4.5 A100 V84 mOhms , 96 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V6.7 nC , 52 nCEnhancement  
HSY0076A


100V 320A 1.9mΩ@10V,90A 333W 4V@250uA null TOLL MOSFETs ROHS
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HUASHUO 997
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AUD 1.9768
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IPP014N06NF2SAKMA2


MOSFETs TRENCH 40<-<100V
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Infineon 996
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AUD 1.948
Multiples of: 1

198 A60 V1.4 mOhmsN - Channel 2.1 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V203 nCEnhancement  
WGA40N50SE


500V 40A 540W 85m@10V 1PCSNChannel TO-247 MOSFETs ROHS
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Wild Goose 996
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AUD 2.463
Multiples of: 1

                   
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