MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CEA6861-VB


60V 6.5A 58m@10V 1PCSPChannel SOT-89-3 MOSFETs ROHS
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VBsemi Elec 1017
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AUD 0.5321
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FDMS8888


Fairchild Semiconductor MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm
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ON Semiconductor 1012
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AUD 0.4416
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13.5 A30 V9.5 mOhmsN - Channel  - 55 C+ 150 C42 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel    Powertrench
TK100E10N1,S1X


Toshiba MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
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Toshiba 1012
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AUD 1.1801
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207 A100 V3.4 mOhmsn - channel     through holeTO - 220 - 3Reelsi1 channel10 V140 nC  dtmosiv
S80P06G


TO-263 MOSFETs ROHS
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HL 1011
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AUD 0.4709
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AO4447A


MOSFET P Trench 30V 17A 1.6V @ 250uA 7 mΩ @ 17A,10V SOIC-8_150mil RoHS
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Alpha & Omega 1011
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AUD 0.5614
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NTMFS0D5N04XLT1G


MOSFETs Power MOSFET, Single, N-Channel, 40V, 0.49mohm, 455A, SO8-FL 5x6 Power MOSFET, Single, N-Channel, 40V, 0.49m ohms, Logic Level, SO8-FL 5x6
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ON Semiconductor 1010
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AUD 2.7582
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455 A40 V490 uOhmsN - Channel 2.2 V- 55 C+ 175 C194 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V127 nCEnhancement  
IXTP3N100D2


MOSFET N-CH MOSFETS (D2) 1000V 3A
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IXYS 1009
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AUD 4.2687
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3 A1 kV6 OhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel     
BSS138


SOT-23 MOSFETs ROHS
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LangJie 1008
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AUD 0.0353
Multiples of: 20

                   
FDN327N


MOSFET N Channel 20V 3A 1.3V @ 250uA 80mO @ 3A,4.5V SOT-23 RoHS
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Shikues 1008
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AUD 0.0361
Multiples of: 20

                   
DMC2038LVT-7


MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K
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Diodes Incorporated 0
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AUD 0.1242
Multiples of: 3000

4.5 A , 3.1 A20 V35 mOhms , 74 mOhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel4.5 V12 nC , 14 nCEnhancement  
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