MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS8958A(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1110
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AUD 0.112
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DMP4047SK3-13


MOSFET 40V P-Ch Enh FET 45mOhm -10V
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Diodes Incorporated 1109
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AUD 0.4346
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20 A40 V40 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V23.2 nCEnhancement  
MS4N1350S


1.5kV 4A 63W 5.8@10V,1.3A 6V@250A 1 N-Channel TO-220F MOSFETs ROHS
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MASPOWER 1108
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AUD 2.0949
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DMTH4011SPDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 1108
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AUD 0.8357
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42 A40 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi2 Channel20 V10.6 nCEnhancementAec - Q101 
DMN1004UFV-13


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 1107
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AUD 0.3497
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70 A12 V2.8 mOhmsN - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel8 V47 nCEnhancement  
UF3C120080K3S


MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
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UnitedSiC 1107
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AUD 18.2731
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IPD78CN10N G-VB


100V 25A null TO-252 MOSFETs ROHS
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VBsemi Elec 1106
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AUD 0.5718
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STU7N65M2


STMicroelectronics MOSFET
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STMicroelectronics 1106
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AUD 0.9555
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5 A650 V1.15 OhmsN - Channel 3 V- 55 C+ 150 C60 WThrough HoleIPAK - 3TubeSi 25 V9 nC  Mdmesh
AP30H80G


30V 70A 4.8mΩ@10V,30A 65W N Channel PDFN-8(4.9x5.8) MOSFETs ROHS
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Quan Li 1081
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AUD 0.264
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HSBB4016


40V 40A 4.9mΩ@10V,10A 43W 2.5V@250uA 175pF@15V N Channel 2354pF@15V 20nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 0
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AUD 0.1995
Multiples of: 5

                   
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