MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS6680A


Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
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ON Semiconductor 2425
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AUD 0.6382
Multiples of: 2500

   N Channel               
IRLB4132PBF


International Rectifier MOSFET
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Infineon 1930
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AUD 0.7886
Multiples of: 1

150 A30 V2.5 mOhmsN - Channel 1.35 V- 55 C+ 175 C140 WThrough HoleTO - 220 - 3Tube-1 Channel20 V54 nCEnhancement Strongirfet
PSMN5R5-60YS.115


Transistor: N-MOSFET; unipolar; 60V; 74A; 130W; LFPAK33
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Nexperia 1115
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AUD 3.3015
Multiples of: 1

                   
RRR030P03HZGTL


P-Channel 30V 3A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 1114
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AUD 0.3513
Multiples of: 1

3 A30 V75 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V5.2 nCEnhancementAEC - Q101 
DMTH6004SPSQ-13


MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A
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Diodes Incorporated 1114
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AUD 1.7239
Multiples of: 1

100 A60 V3.1 mOhmsN - Channel 2 V- 55 C+ 175 C167 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V95.4 nCEnhancementAec - Q101 
DMN3025LFV-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 1113
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AUD 0.1839
Multiples of: 1

25 A30 V18 mOhmsN - Channel 2 V  0.9 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V9.8 nCEnhancement  
SSM6L61NU,LF


MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A
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Toshiba 1113
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AUD 0.2315
Multiples of: 1

4 A , - 4 A20 v , - 20 V108 mOhms , 157 mOhmsN - Channel, P - Channel 400 mV , - 500 mV-+ 150 C2 WSmd/SmtUDFN - 6ReelSi2 Channel+/- 8 v , +/- 12 V3.6 nC , 6.74 nCEnhancement  
NTMFS5C645NLT1G


DFN-5(5.9x4.9) MOSFETs ROHS
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ON Semiconductor 1113
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AUD 1.4244
Multiples of: 1

100 A60 V3.3 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V34 nCEnhancement  
STL60P4LLF6


STMicroelectronics MOSFET
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STMicroelectronics 909
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AUD 1.1644
Multiples of: 1

60 A40 V11.5 mOhmsP - Channel 1 V + 175 C100 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V34 nCEnhancement Stripfet
RCJ510N25TL


Trans MOSFET N-CH 250V 51A 3-Pin(2+Tab) LPTS T/R
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ROHM 558
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AUD 3.9075
Multiples of: 1

51 A250 V65 mOhmsN - Channel 5 V- 55 C+ 150 C304 WSMD/SMTTO - 263 - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V120 nCEnhancement  
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