MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
QH8KB5TCR


MOSFET 40V N&N-CHANNEL
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ROHM 4041
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.417

Multiples of: 1

4.5 A40 V44 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nCEnhancement  
IRLR120PBF


MOSFET N-Chan 100V 7.7 Amp
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Vishay 1134
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.9293

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKTubeSi      
BUK969R0-60E,118


N-Channel 60 V 75A (Tc) 137W (Tc) Surface Mount D2PAK
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Nexperia 1134
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 1.3249

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         Smd/SmtTO - 263 - 3ReelSi      
NTMFS5C645NT1G


MOSFET 60 V 4.5 M 94 A SINGLE N CHANNEL
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ON Semiconductor 1134
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 2.1672

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          SO - 8FL - 4        
RBE034N15R1SZPW#KB0


MOSFETs Ind. MOS REXFET-1 150V 3.4mohm TOLT
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Renesas 1134
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 6.8627

Multiples of: 1

200 A150 V3.4 mOhmsN - Channel 4 V   SMD/SMT Reel , Cut TapeSi  96 nCEnhancement SmartBond
STD11N60DM2


MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
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STMicroelectronics 1134
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between Wed. 12 Aug to Mon. 17 Aug
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AUD 1.7572

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10 A600 V370 mOhmsN - Channel 3 V- 55 C+ 150 C110 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel25 V16.5 nCEnhancement Mdmesh
IXTK120N25P


MOSFET 120 Amps 250V 0.024 Rds
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IXYS 1133
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 18.4866

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120 A250 V24 mOhmsN - Channel 5 V- 55 C+ 175 C700 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V185 nCEnhancement Polarht
IPU80R2K4P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
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Infineon 1131
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 0.4646

Multiples of: 1

            Coolmos P7      
R6576ENZ4C13


MOSFET MOSFET
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ROHM 1131
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 22.0769

Multiples of: 1

76 A650 V46 mOhmsN - Channel 4 V- 55 C+ 150 C735 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V260 nCEnhancement  
IPB330P10NMATMA1


MOSFET TRENCH >=100V
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Infineon 1112
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between Tue. 04 Aug to Thu. 06 Aug
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AUD 3.3

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62 A100 V33 mOhmsP - Channel 4 V- 55 C+ 175 C300 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V189 nCEnhancement  
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