MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9610PBF


P-Channel 200 V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB
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Vishay 1717
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AUD 0.8047
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1.8 A200 V3 OhmsP - Channel 2 V- 55 C+ 150 C20 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V11 nCEnhancement  
DMN2004K-7


mosfet n trench 20v 630ma 1v @ 250ua 550 m @ 540ma,4.5v sot-23 (sot-23-3) rohs
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Diodes Incorporated 1139
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AUD 0.1567
Multiples of: 1

                   
VB5222


MOSFET N & P Trench 20V 5.5A,3.4A 600mV @ 250uA,700mV @ 250uA 24 mΩ @ 2.5A,10V;69 mΩ @ 1.8A,10V TSOP-6 RoHS
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VBsemi Elec 1139
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AUD 0.2079
Multiples of: 5

                   
NCV8403A-HXY


40V 20A 25m 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 1139
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AUD 0.8201
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PSMN1R7-40YLBX


MOSFETs SOT669 N CHAN 40V
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Nexperia 1139
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AUD 0.9391
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200 A40 V1.8 mOhmsN - Channel 2.05 V- 55 C+ 175 C194 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V79 nCEnhancement  
IRFS11N50APBF


N-Channel 500 V 11A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 1137
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AUD 2.3478
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         Smd/SmtTO - 263 - 3TubeSi      
TK090U65Z,RQ


MOSFET PWR MOS PD=230W F=1MHZ
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Toshiba 1136
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AUD 4.8
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30 A650 V70 mOhmsN - Channel 4 V- 55 C+ 150 C230 WSMD/SMT2 - 10AF1A - 9Reel , Cut TapeSi1 Channel- 30 V , 30 V47 nCEnhancement  
AO4419


30V 7A 18mO@10V,7A 2.5W P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 1134
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AUD 0.325
Multiples of: 5

                   
SI3420A-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 1115
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AUD 0.1711
Multiples of: 5

           Cut TapeSi      
PSMN0R9-25YLC.115


MOSFET N Trench 25V 100A (Tc) 1.95V @ 1mA 0.99 mΩ @ 25A,10V SOT-669 RoHS
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Nexperia 1103
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AUD 0.9738
Multiples of: 1

                   
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