MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2333


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 1144
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AUD 0.0641
Multiples of: 10

                   
IXFK520N075T2


MOSFET TRENCHT2 PWR MOSFET 75V 520A
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IXYS 1136
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AUD 18.7985
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520 A75 V2.2 mOhmsn - channel 5 V- 55 C+ 175 C1.25 kWthrough holeTO - 264 - 3Tubesi 20 V545 nCenhancement hiperfet
RF4P025ATTCR


MOSFETs RF4P025AT is a low on-resistance MOSFET suitable for switching and load switches.
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ROHM 1135
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AUD 0.4236
Multiples of: 1

2.5 A100 V280 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V19.7 nCEnhancement  
NVMFS5C460NLET1G


MOSFETs T6-40V N 4.5 MOHMS LL
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ON Semiconductor 1135
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AUD 0.484
Multiples of: 1

78 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V23 nCEnhancement  
DMC4050SSD-13


40V 5.3A 45mO@10V,3A 1.8W 1PCSN-Channel&1PCSP-Channel SO-8 MOSFETs ROHS
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Diodes Incorporated 1135
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AUD 0.5172
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5.8 A40 V45 mOhmsN - Channel, P - Channel 1.3 V- 55 C+ 150 C2.14 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V37.56 nCEnhancement  
R6027YNZ4C13


MOSFETs Nch 600V 27A, TO-247G, Power MOSFET: R6027YNZ4 is a power MOSFET with Low on - resistance, suitable for switching.
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ROHM 1135
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AUD 5.4015
Multiples of: 1

27 A600 V135 mOhmsN - Channel 6 V- 55 C+ 150 C245 WThrough HoleTO - 247G - 3TubeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
NDS0610


SOT-23(TO236) MOSFETs ROHS
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TECH PUBLIC 1134
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AUD 0.0586
Multiples of: 10

                   
IRF7313TRPBF


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1134
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AUD 0.2124
Multiples of: 5

                   
VBZA9945


60V 8A 27mO@10V,8A 2 N-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 1134
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AUD 0.5505
Multiples of: 1

                   
PJA3400_R1_00001


MOSFET 30V N-Channel Enhancement Mode MOSFET
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Panjit 1037
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AUD 0.14
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4.9 A30 V38 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V5.7 nCEnhancement  
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