MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHW47N60E-GE3


MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
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Vishay 1396
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AUD 9.2425
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47 A600 V65 mOhmsN - Channel 4 V- 55 C+ 150 C379 WThrough HoleTO - 247ADTubeSi1 Channel30 V152 nCEnhancement E - Series
STP13N80K5


Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; TO220-3
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STMicroelectronics 1395
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AUD 2.5618
Multiples of: 1000

            Supermesh      
NTMYS006N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 1393
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AUD 1.8388
Multiples of: 1

77 A80 V7.8 mOhmsN - Channel 2 V- 55 C+ 175 C89 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V34 nCEnhancement  
IPT023N10NM5LF2ATMA1


MOSFETs TRENCH >=100V
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Infineon 1393
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AUD 3.5299
Multiples of: 1

243 A100 V2.1 mOhmsN - Channel 3.9 V- 55 C+ 175 C300 WSMD/SMTPG - HSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V115 nCEnhancement OptiMOS
TPM6061PK3-1


TO-252 MOSFETs ROHS
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TECH PUBLIC 1392
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AUD 0.832
Multiples of: 1

                   
NTBG030N120M3S


MOSFET SIC MOS D2PAK-7L 30MOHM 1200V M3
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ON Semiconductor 1392
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AUD 11.2299
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 1.2 kV30 Ohms      SMD/SMTD2PAK - 7LReel , Cut TapeSiC      
WST2333


MOSFET P Trench 12V 6A (Tc) 1V @ 250uA 32 mΩ @ 4A,4.5V SOT-23 RoHS
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Winsok 1391
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AUD 0.0834
Multiples of: 5

                   
SK02N06E


SOT-223 MOSFETs ROHS
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Shikues 1391
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AUD 0.1364
Multiples of: 5

                   
STD35NF06LT4


MOSFET N-Ch 60 Volt 35 Amp
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STMicroelectronics 1383
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AUD 1.4836
Multiples of: 1

   N Channel      TO - 252Reel       
STP100N8F6


N-Channel 80 V 100A (Tc) 176W (Tc) Through Hole TO-220
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STMicroelectronics 28
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AUD 0.6571
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100 A80 V8 mOhmsN - Channel 2 V- 55 C+ 175 C176 WThrough HoleTO - 220 - 3ReelSi1 Channel20 V100 nCEnhancement Stripfet
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