MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM605Q


60V 58A 50W 6.2m@10V,15A 1.6V@250uA 1PCSNChannel DFN5x6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

AGM-Semi 1406
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AUD 0.4326
Multiples of: 5

                   
RFP12N10L


Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
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ON Semiconductor 1406
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AUD 0.8547
Multiples of: 50

   N Channel               
STD8N65M5


Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; DPAK
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STMicroelectronics 1406
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AUD 2.1631
Multiples of: 1

7 A650 V560 mOhmsN - Channel 3 V- 55 C+ 150 C70 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V15 nCEnhancement MDmesh
STP46NF30


STMicroelectronics MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET
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STMicroelectronics 1406
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AUD 2.6528
Multiples of: 1

42 A300 V63 mOhmsN - Channel 3 V + 175 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V90 nC Aec - Q101Stripfet
SISS27ADN-T1-GE3


MOSFET P-Ch -30V Vds 36.6nC Qg Typ
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Vishay 1405
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AUD 0.7069
Multiples of: 1

50 A30 V4.2 mOhmsP - Channel 2.2 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V117 nCEnhancement Trenchfet, Powerpak
HSBA8024A


80V 122A 6.5mΩ@10V,30A 156W 4V@250uA 278pF@15V N Channel 5.58nF@15V 84nC@10V -55℃~+150℃@(Tj) PRPAK5x7 MOSFETs ROHS
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HUASHUO 1405
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AUD 0.9944
Multiples of: 1

                   
IPP086N10N3GXKSA1


Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
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Infineon 1405
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AUD 1.5022
Multiples of: 1

            Optimos 5      
FDMS2D5N08C


MOSFET PTNG 80V20V N-Channel MOSFET
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ON Semiconductor 1405
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AUD 2.594
Multiples of: 1

166 A80 V2.7 mOhmsN - Channel 4 V- 55 C+ 150 C138 WSMD/SMTPOWER - 56F - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V60 nCEnhancement PowerTrench
AO4813


30V 8.3A 2.5W 21mO@10V,7.3A 2 P-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 1405
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AUD 0.4292
Multiples of: 1

                   
NVMFS5C456NLAFT1G-YE


MOSFETs T6 40V NCH LL IN S08FL
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ON Semiconductor 1404
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AUD 0.5563
Multiples of: 1

87 A40 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C55 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V18 nCEnhancement  
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