MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7922DN-T1-E3


MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
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Vishay 1398
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AUD 1.2625
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
IRF9Z14PBF-BE3


P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 1397
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AUD 0.5988
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6.7 A60 V500 mOhmsP - Channel 4 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
IPU80R900P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
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Infineon 1397
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AUD 0.8619
Multiples of: 1

            Coolmos P7      
IRLB3813PBF


MOSFET N Trench 30V 260A 2.35V @ 150uA 1.95 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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Infineon 1397
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AUD 1.3297
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260 A30 V1.95 mOhmsN - Channel 1.9 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V57 nC   
FDN336P


SOT-23 MOSFETs ROHS
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SLKORMICRO 1396
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AUD 0.0099
Multiples of: 20

                   
WNM7002-3/TR


60V 280mA 3.7mO@10V,300mA 830mW N Channel SOT-23 MOSFETs ROHS
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Will Semiconductor 1396
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AUD 0.0266
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FDV301N


SOT-23 MOSFETs ROHS
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Youtai 1396
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AUD 0.0322
Multiples of: 20

                   
AO3407A-HXY


30V 4.1A 48mΩ P Channel SOT-23 MOSFETs ROHS
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HXY MOS 1396
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AUD 0.0381
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FS2310ALT1 S10


20V 6A 20mΩ@4.5V,5A 1450mW 1.2V@250uA N Channel 600pF@10V -55℃~+150℃@(Tj) SOT-23-3L MOSFETs ROHS
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FOSAN 1396
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AUD 0.058
Multiples of: 10

                   
IRLI640GPBF


N-Channel 200 V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 1393
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AUD 1.7075
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTubeSi      
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