MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLUS4C16NTAG


MOSFET 30V 9.4A 11.4mOhm SNGL N-CHAN PWR MSFT
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ON Semiconductor 1414
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AUD 0.3415
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9.4 A30 V9.3 mOhmsN - Channel 600 mV- 55 C+ 150 C2.37 WSmd/SmtUDFN - 6Cut TapeSi1 Channel10 V7.5 nCEnhancement  
PSMN2R2-30YLC,115


NXP Semiconductors MOSFET N-Ch 30V 2.15mOhms
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Nexperia 1414
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AUD 0.6042
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100 A30 V2.15 mOhmsN - Channel20 V1.49 V- 55 C+ 175 C141 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V55 nC   
BUK6M61-60PX


MOSFETs 60 V, P-channel Trench MOSFET
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Nexperia 1413
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AUD 0.6097
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27 A60 V100 mOhmsP - Channel 1.7 V- 55 C+ 175 C99 WSMD/SMT Reel , Cut Tape  - 2 V Enhancement  
SI4483ADY-T1-GE3


MOSFET -30V Vds 25V Vgs SO-8
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Vishay 1413
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AUD 1.7761
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19.2 A30 V15.3 mOhmsP - Channel 2.6 V- 55 C+ 150 C5.9 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V135 nCEnhancement TrenchFET
IXTA96P085T-TRL


MOSFET IXTA96P085T TRL
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IXYS 1413
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AUD 6.5507
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96 A85 V13 mOhmsP - Channel - 2 V- 55 C+ 150 C298 WSmd/SmtTO - 263AA - 3Cut TapeSi1 Channel15 V180 nCEnhancement Trench
IXTH120P065T


MOSFET -120 Amps -65V 0.01 Rds
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IXYS 1413
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AUD 8.2582
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120 A65 V10 mOhmsP - Channel  - 55 C+ 150 C298 WThrough HoleTO - 247 - 3TubeSi1 Channel15 V58 nC   
BSS84PH6433XTMA1


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 1412
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AUD 0.0755
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   P - Channel  - 55 C+ 150 C Smd/SmtPG - SOT - 23Reel       
AUN063N10


100V 123A 151W 6.3m 2.9V DFN-8(5x6) MOSFETs ROHS
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ANHI 1412
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AUD 0.5023
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AO4480


SOP-8 MOSFETs ROHS
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Youtai 1411
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AUD 0.1179
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STN2610D


60V 50A 10mΩ@10V,20A 63W 2.5V@250uA N Channel TO-252-2 MOSFETs ROHS
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STANSON Tech 1411
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AUD 0.1223
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