MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPC100N04S5L-2R6


Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
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Infineon 1421
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 0.8827

Multiples of: 1

            Optimos 5      
NTMFS4C028NT1G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor 1420
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 0.2775

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         Smd/SmtSO - FL - 8Cut TapeSi      
US6J12TCR


MOSFET -12V PCH+PCH SMALL SIGNAL
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ROHM 1420
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 0.3994

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2 A12 V105 mOhmsP - Channel 300 mV- 55 C+ 150 C1 WSmd/SmtSOT - 363T - 6Cut TapeSi2 Channel8 V7.6 nCEnhancement  
HUF76639S3ST


Fairchild Semiconductor MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch
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ON Semiconductor 1419
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 1.8388

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50 A100 V23 mOhmsN - Channel  - 55 C+ 175 C180 WSmd/SmtD2PAK - 3ReelSi1 Channel16 V Enhancement  
RS1E321GNTB1


N-Channel 30 V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
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ROHM 1418
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 1.8224

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80 A30 V2.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C34 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V42.8 nCEnhancement  
IPDD60R145CFD7XTMA1


N-Channel 600V 24A (Tc) 160W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 1417
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 3.0119

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24 A650 V145 mOhmsN - Channel 4.5 V- 55 C+ 150 C160 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
SE2301


MOSFET P Trench 20V 2.8A 450mV @ 250uA(Min) 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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SINO-IC 1416
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 0.0159

Multiples of: 20

                   
2SK3019-MS


30V 100mA 8Ω@4V,10mA 150mW 1.5V@100uA 4pF@5V N Channel 13pF@5V +150℃@(Tj) SOT-523 MOSFETs ROHS
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MSKSEMI 1416
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 0.0193

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SE3400


SOT-23-3 MOSFETs ROHS
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SINO-IC 1416
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 0.0224

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IRLML6246TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai 1416
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 0.0375

Multiples of: 10

                   
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