MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJMH074N60FRC_T0_00601


MOSFETs 600V 74mohm 53A Fast Recovery Qrr trr SJ MOSFET
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Panjit 1425
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 6.5343

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           TubeSi      
PJMH074N60FRC


MOSFETs 600V 74m ohms 53A Fast Recovery Qrr trr Ruggednss
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Panjit 1425
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 7.2239

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53 A600 V74 mOhmsN - Channel 4.5 V- 55 C+ 150 C446 WThrough HoleTO - 247AD - 3LDTubeSi1 Channel- 30 V , + 30 V84 nCEnhancement  
IRFR310TRLPBF


Vishay Semiconductors MOSFET N-Chan 400V 1.7 Amp
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Vishay 1424
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 0.6649

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1.7 A400 V3.6 OhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3Reel    Enhancement  
IPT004N03L


Infineon Technologies MOSFET
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Infineon 1424
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AUD 3.6612

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300 A30 V400 uOhmsN - Channel 700 mV- 55 C+ 150 C300 WSmd/SmtPG - HSOF - 8ReelSi1 Channel10 V122 nCEnhancement Optimos
NVMFS5113PLT1G-TP


DFN-5(5.9x4.9) MOSFETs ROHS
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TECH PUBLIC 1423
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between Mon. 10 Aug to Thu. 13 Aug
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AUD 1.0705

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TQM032NH04CR RLG


MOSFETs 40V, 81A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 1423
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AUD 1.1673

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81 A40 V3.8 mOhmsN - Channel 3.6 V- 55 C+ 175 C115 WSMD/SMTPDFN - 56Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
NVMFS5C426NET1G


MOSFETs T6-D3F 40V NFET
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ON Semiconductor 1422
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 0.9096

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235 A40 V1.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C128 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V65 nCEnhancement  
IPTG014N10NM5ATMA1


100V 1.4mO@150A,10V N Channel HSOG-8-1 MOSFETs ROHS
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Infineon 1422
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AUD 4.7448

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366 A100 V1.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHSOG - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V169 nCEnhancement  
NTMFS011N15MC


MOSFET PTNG 150V 11MOHM PQFN56
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ON Semiconductor 1422
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between Fri. 31 Jul to Tue. 04 Aug
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AUD 11.4597

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35 A150 V11.5 mOhmsN - Channel 4.5 V- 55 C+ 150 C147 WSMD/SMTPQFN - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V30.6 nCEnhancement  
SUP90N06-6M0P-E3


Vishay Semiconductors MOSFET 60V 90A 272W 6.0mohm 10V
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Vishay 0
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AUD 1.6735

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53 A60 V5 mOhmsN - Channel 2.5 V- 55 C+ 175 C272 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nCEnhancement Trenchfet
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