MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SWD068R68E7T


68V 90A 7.1mΩ TO-252 MOSFETs ROHS
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Sam&wing 1721
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AUD 0.2656
Multiples of: 5

                   
SQ3426AEEV-T1_GE3


MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
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Vishay 1721
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AUD 0.4719
Multiples of: 1

7 A60 V32 mOhmsN - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6ReelSi1 Channel20 V14 nCEnhancementAec - Q101Trenchfet
IRFS7434TRL7PP


Trans MOSFET N-CH 40V 362A 7-Pin D2PAK T/R
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Infineon 1720
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AUD 1.0026
Multiples of: 1

240 A40 V1 mOhmsN - Channel20 V3 V  245 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V210 nCEnhancement Strongirfet
IPD028N06NF2SATMA1


MOSFETs N
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Infineon 1720
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AUD 1.2445
Multiples of: 1

139 A60 V2.85 mOhmsN - Channel 2.1 V- 55 C+ 175 C150 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V68 nCEnhancement StrongIRFET
NVMFWS0D63N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 1720
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AUD 2.1686
Multiples of: 1

384 A40 V600 uOhmsN - Channel 3.5 V- 55 C+ 175 C157 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V92.2 nCEnhancement  
SK240N04


40V 240A 3.3mΩ@10V,80A 4V@250uA null TO-252 MOSFETs ROHS
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Shikues 1718
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AUD 0.6762
Multiples of: 1

                   
SL3406


30V 5.6A 21mΩ@10V,29A 1.2W 1.5V@250uA N Channel SOT-23-3 MOSFETs ROHS
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SLKORMICRO 1716
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AUD 0.0419
Multiples of: 10

                   
SL3404


30V 5A 45mO@20V,5A 1.4W N SOT-23 MOSFETs ROHS
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SLKORMICRO 1716
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AUD 0.0411
Multiples of: 10

                   
RD3L050SNFRATL


MOSFET Nch 60V 5A 15W Pd DPAK TO-252
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ROHM 1710
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AUD 1.0639
Multiples of: 1

5 A60 V109 mOhmsN - Channel 1 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V8 nCEnhancementAec - Q101 
IPP089N15NM6AKSA1


MOSFETs TRENCH >=100V
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Infineon 1705
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AUD 1.6336
Multiples of: 1

88 A150 V8.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C158 WThrough HoleTO - 220 - 3TubeSi1 Channel 29 nCEnhancement  
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