MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
S60N04F


40V 60A 6.9mΩ 3V N Channel PDFN-8-EP(5x6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 1726
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AUD 0.1441
Multiples of: 5

                   
DMP1245UFCL-7


P-Channel 12 V 6.6A (Ta) 613mW (Ta) Surface Mount X1-DFN1616-6 (Type E)
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Diodes Incorporated 1726
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AUD 0.3694
Multiples of: 1

6.6 A12 V25 mOhmsP - Channel  - 55 C+ 150 C613 mWSmd/SmtX1 - DFN1616 - 6ReelSi1 Channel8 V Enhancement  
BSP125 H6433


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 1725
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AUD 0.4874
Multiples of: 1

120 mA600 V25 OhmsN - Channel 1.3 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V6.6 nCEnhancement  
DMTH4005SK3-13


MOSFET N Trench 40V 95A (Tc) 4V @ 250uA 4.5 mΩ @ 50A,10V TO-252-2 (DPAK) RoHS
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Diodes Incorporated 1722
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AUD 0.6452
Multiples of: 1

                   
AO4826


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1721
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AUD 0.2384
Multiples of: 5

                   
CSD16404Q5A


N-Channel 25 V 21A (Ta), 81A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 1720
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AUD 0.7818
Multiples of: 1

100 A25 V5.7 mOhmsN - Channel 1.8 V- 55 C+ 150 C3 WSmd/SmtQFN - 8ReelSi1 Channel16 V6.5 nCEnhancement Nexfet
IRLR024NTR


60V 30A 25m@10V,10A 44W 1 N-Channel TO-252 MOSFETs ROHS
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Minos 1716
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AUD 0.1751
Multiples of: 5

                   
SP010P190T1


SOT-23-3L MOSFETs ROHS
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Siliup 1712
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AUD 0.1541
Multiples of: 5

                   
DMN2004WK-7


N-Channel 20 V 540mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 1678
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AUD 0.0536
Multiples of: 10

   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
IXFH60N50P3


MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET
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IXYS 124
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AUD 15.191
Multiples of: 1

60 A500 V100 mOhmsN - Channel 5 V  1040 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V96 nC  Hiperfet
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