MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQD40081EL_GE3


MOSFET -40V Vds; +/-20V Vgs TO-252; -50A Id
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Vishay 1746
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AUD 1.8831
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50 A40 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V210 nCEnhancement  
DMT3009LFVW-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 1735
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AUD 0.3743
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5 A30 V11 mOhmsN - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtPowerdi3333 - 8 Si1 Channel10 V12 nCEnhancement  
DMP4026LSSQ-13


MOSFETs MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K
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Diodes Incorporated 1735
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AUD 0.4351
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           Reel , Cut TapeSi      
STD45P4LLF6AG


STMicroelectronics MOSFET
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STMicroelectronics 1735
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AUD 0.961
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50 A40 V15 mOhmsP - Channel 1 V- 55 C+ 150 C58 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel- 10 V65.5 nCEnhancementAec - Q101Stripfet
SIRS4300DP-T1-RE3


MOSFETs PPAKSO8 N-CH 30V 90A
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Vishay 1735
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AUD 2.6433
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680 A30 V400 uOhmsN - Channel 2.2 V- 55 C+ 150 C278 WSMD/SMTPOWERPAK - SO - 8SReel , Cut TapeSi1 Channel- 16 V , + 20 V180 nCEnhancement TrenchFET
RF6L025BGTCR


MOSFETs MOSFET 60V N-CHAN
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ROHM 1734
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AUD 0.2052
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2.5 A60 V91 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 363T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V3.1 nCEnhancement  
IPD30N08S222ATMA1


Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
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Infineon 1734
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AUD 1.1801
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            Optimos      
IPB50R140CP


MOSFET COOL MOS N-CH 550V 23A
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Infineon 1733
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AUD 3.2015
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23 A500 V130 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WSmd/SmtTO - 263ReelSi1 Channel20 V64 nCEnhancement Coolmos
IMT44R025M2HXTMA2


MOSFETs SIC-MOS
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Infineon 1733
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AUD 8.5701
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68 A440 V32.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C214 WSMD/SMTHSOF - 8Reel , Cut TapeSiC1 Channel- 7 V , 23 V36 nC  CoolSiC
TPSTL42P6LLF6


PDFN5X6-8 MOSFETs ROHS
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TECH PUBLIC 1732
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AUD 1.1082
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