MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN019-100YLX


MOSFET PSMN019-100YL/LFPAK/REEL 7" Q1
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Nexperia 1738
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AUD 0.6501
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56 A100 V14 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V72.4 nCEnhancement  
FDS3672


MOSFET 100V 7.5a .22 Ohms/VGS=1V
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ON Semiconductor 1738
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AUD 1.4
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   N Channel      SOIC - 8 NarrowReel       
SI4485DY-T1-GE3


P-Channel 30 V 6A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
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Vishay 1737
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AUD 0.6418
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSO - 8ReelSi     Trenchfet
FDMS7580


N-Channel 25 V 15A (Ta), 29A (Tc) 2.5W (Ta), 27W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 1737
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AUD 1.0458
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40 A25 V7.5 mOhmsN - Channel 1.7 V- 55 C+ 150 C59 WSmd/SmtPOWER - 33ReelSi1 Channel    Powertrench
IPB019N08N3 G


Infineon Technologies MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
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Infineon 1737
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AUD 4.597
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180 A80 V1.9 mOhmsN - Channel20 V2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V206 nCEnhancement Optimos
IMT44R015M2HXTMA2


MOSFETs SIC-MOS
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Infineon 1737
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AUD 11.3119
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111 A440 V19.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C341 WSMD/SMTHSOF - 8Reel , Cut TapeSiC1 Channel- 7 V , 23 V62 nCEnhancement CoolSiC
CM3400


30V 5.8A SOT-23 MOSFETs ROHS
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Applied Power 1736
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AUD 0.031
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CJL2013


MOSFET SOT-23-6L RoHS
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Changjing Electronics Technology 1736
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AUD 0.0619
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TPM1013ER3


SOT-523 MOSFETs ROHS
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TECH PUBLIC 1736
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AUD 0.0689
Multiples of: 10

                   
DMTH6016LPD-13


MOSFET MOSFET BVDSS: 41V~60V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 1686
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AUD 0.6222
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
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