MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RFD14N05LSM


Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; TO252AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1746
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AUD 0.6541
Multiples of: 75

   N Channel               
FDMC86012


Fairchild Semiconductor MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 1746
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AUD 0.8776
Multiples of: 1

88 A30 V2.7 mOhmsN - Channel 1 V- 55 C+ 150 C54 WSmd/SmtPOWER - 33 - 8ReelSi1 Channel12 V27 nCDepletion Powertrench Power Clip
TK5P60W,RVQ


Toshiba MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF
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Toshiba 1746
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AUD 1.3709
Multiples of: 1

5.4 A600 V770 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V10.5 nC  Dtmosiv
IPAW60R280CEXKSA1


Transistor: N-MOSFET; unipolar; 600V; 2.2A; 32W; TO220FP-W
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Infineon 1746
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AUD 1.5183
Multiples of: 1

            coolmos ce      
IRL8114PBF


MOSFET 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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Infineon 1746
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AUD 2.0677
Multiples of: 1

           Tube       
STWA40N90K5


MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package
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STMicroelectronics 1746
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AUD 14.1552
Multiples of: 1

40 A900 V88 mOhmsN - Channel 3 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 3 Si1 Channel30 V89 nCEnhancement Mdmesh
STW40N95K5


Transistor: N-MOSFET; unipolar; 950V; 24A; 450W; TO247
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STMicroelectronics 1746
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AUD 16.2291
Multiples of: 30

            Mdmesh      
PSMN3R3-80YSFX


MOSFETs PSMN3R3-80YSF/SOT669/LFPAK
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Nexperia 1745
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AUD 0.9703
Multiples of: 1

160 A80 V3.1 mOhmsN - Channel 4 V- 55 C+ 175 C254 WSMD/SMTPOWER - SO8 - 4 Si1 Channel- 20 V , + 20 V70 nCEnhancement  
STP24NM60N


MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II
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STMicroelectronics 1745
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AUD 2.5453
Multiples of: 1

17 A650 V168 mOhmsN - Channel 3 V  120 WThrough HoleTO - 220TubeSi1 Channel30 V46 nC  Mdmesh
DMTH6016LPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 1713
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AUD 0.7544
Multiples of: 1

37 A60 V12 mOhmsN - Channel 1 V- 55 C+ 175 C37.5 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V17 nCEnhancement  
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