MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON7280


Transistor: N-MOSFET; unipolar; 80V; 39A; 33W; DFN3x3 EP
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Alpha & Omega 2237
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AUD 1.0566
Multiples of: 1

                   
PML340SN,118


NXP Semiconductors MOSFET TAPE13 TRENCH 30V G3
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Nexperia 2013
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AUD 1.4362
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7.3 A220 V386 mOhmsn - channel  - 55 C+ 150 C50 Wsmd/smtHVSON - 8Reelsi1 channel20 V enhancement  
2SK3054-T1-A


Trans MOSFET N-CH 50V 0.1A 3-Pin SC-70 T/R
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Renesas 2012
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AUD 0.1715
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AP4846


60V 7A 15mΩ@20V,7A 2 N-Channel SOP-8 MOSFETs ROHS
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Quan Li 2012
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AUD 0.4453
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FDMS7660


MOSFET 30/20V Nch Power Trench
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ON Semiconductor 2012
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AUD 0.8275
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25 A30 V2.8 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V Enhancement Powertrench
AON6998


Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
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Alpha & Omega 2011
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AUD 1.0343
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TSM60N900CI


MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
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Taiwan Semiconductor 2011
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AUD 5.1923
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4.5 A600 V900 mOhmsN - Channel 4 V- 55 C+ 150 C20 WThrough HoleTO - 220 - 3TubeSi1 Channel+/- 30 V9.7 nCEnhancement  
NXV65UPR


MOSFET NXV65UP/SOT23/TO-236AB
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Nexperia 2009
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AUD 0.4701
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AG502ELD3HRBTL


MOSFETs Pch -60V -48A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2008
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AUD 1.0836
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48 A60 V30 mOhmsP - Channel 2.5 V- 55 C+ 175 C77 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 5 V82 nCEnhancement  
STN4438


60V 8.5A 2.8W 1PCSNChannel SOP-8 MOSFETs ROHS
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STANSON Tech 1906
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AUD 0.1723
Multiples of: 5

                   
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