IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW80H65FB


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 5.3753
Multiples of: 1

Single650 V1.6 V20 V120 A250 nA  TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
FGH75T65SQD-F155


IGBT Transistors 650V FS4 Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.3887
Multiples of: 1

                
FGA6065ADF


Fairchild Semiconductor IGBT Transistors 650V FS Gen3 Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.4119
Multiples of: 1

Single650 V1.8 V+/- 20 V120 A+/- 400 nA  TO - 3PNTubeSiThrough Hole306 W- 55 C+ 175 CFga6065adf
FGHL50T65SQDT


IGBT Transistors 650 FS4 HI SPEED 50 A WITH FULL RATING FRD
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AUD 5.4214
Multiples of: 1

                
AUIRGS4062D1


Transistor: IGBT; IGBT Trench; 600V; 39A; 123W; D2PAK
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AUD 5.4247
Multiples of: 1

      123 W   Igbt Trench     
IRG4PF50WPBF


IGBT Transistors 900V Warp 20-100kHz
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Infineon 0
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AUD 5.4266
Multiples of: 1

Single900 V2.7 V+/- 20 V51 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
FGHL50T65MQD


IGBT Transistors 650 V 50 A FS4
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AUD 5.4334
Multiples of: 1

                
HGTG30N60B3D


Transistor: IGBT; 600V; 30A; 208W; TO247
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AUD 5.4448
Multiples of: 30

                
IRGP4760PBF


Transistor: IGBT; 650V; 90A; 325W; TO247-3
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AUD 5.4468
Multiples of: 1

      325 W         
IXGH28N120B


IGBT Transistors 28 Amps 1200V 3.50 Rds
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AUD 5.4641
Multiples of: 1

Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
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