IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXA12IF1200TC


IGBT Transistors XPT IGBT Copack
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 5.7077
Multiples of: 1

Single1200 V1.8 V20 V20 A500 nA  TO - 268 - AA - 4TubeSiSmd/Smt85 W- 55 C+ 150 CIxa12if1200
FGH60T65SHD-F155


IGBTs Trench Field Stop 650V 120A TO-247-3 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.7242
Multiples of: 1

                
IKZ50N65NH5


IGBT Transistors INDUSTRY 14
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AUD 5.7308
Multiples of: 1

                
IRG4PH40KDPBF


Transistor: IGBT; 1200V; 15A; 160W; TO247-3
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AUD 5.74
Multiples of: 4

      160 W         
IXYH40N65B3


Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
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AUD 5.7463
Multiples of: 1

      300 W   Genx3, Planar, Xpt     
IKZ75N65NH5XKSA1


Transistor: IGBT; 650V; 75A; 197W; TO247-4; Series: H5
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AUD 5.7565
Multiples of: 1

      197 W   Trenchstop 5    H5
NGTB40N60L2WG


ON Semiconductor IGBT Transistors 600V40A FAST IGBT FSII T
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AUD 5.7619
Multiples of: 1

Single600 V2 V20 V80 A200 nA  TO - 247 - 3Tube Through Hole417 W- 55 C+ 175 C 
RGTV80TS65DGC11


ROHM Semiconductor
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AUD 5.7634
Multiples of: 1

                
IXYP30N65C3


IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
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AUD 5.7672
Multiples of: 1

Single650 V2.35 V20 V60 A100 nA  TO - 220 - 3 SiThrough Hole270 W- 55 C+ 175 C 
IRG4PH40UD-EPBF


IGBT Transistors 1200V UltraFast 5-40kHz
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AUD 5.7699
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V30 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
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