IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N65UFDTU_F085


Fairchild Semiconductor IGBT Transistors N-ch 40A 650V IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.4664
Multiples of: 1

Single650 V1.8 V+/- 20 V80 A+/- 400 nA  TO - 247 - 3TubeSicThrough Hole290 W- 55 C+ 150 CFgh40n65uf_F085
IKW30N60TA


Infineon Technologies IGBT Transistors IGBT TrnchStp wSoft Fast recovery
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 5.4669
Multiples of: 1

Single600 V1.9 V20 V45 A100 nA  TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 175 CIkw30n60
AOK20B120D1


Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
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Alpha & Omega 0
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AUD 5.4683
Multiples of: 1

  1.54 V   170 W         
FGH4L50T65SQD


IGBT Transistors FS4 T TO247 50A 650V 4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.4825
Multiples of: 1

                
IXSH10N60B2D1


IGBT Transistors 10 Amps 600V 2.5 Rds
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IXYS 0
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AUD 5.5
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA100 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh10n60
STGWA8M120DF3


IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
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STMicroelectronics 0
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AUD 5.5065
Multiples of: 1

                
IXGA20N120


IGBT Transistors 40 Amps 1200V 2.5 Rds
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IXYS 0
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AUD 5.5068
Multiples of: 50

Single1200 V3 V20 V    TO - 263 - 3TubeSiSmd/Smt - 55 C+ 150 CIxga20n120
RGS80TS65DHRC11


IGBT Transistors TO247NNP 650V TRNCH 40A
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ROHM 0
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AUD 5.5172
Multiples of: 1

                
IRGP30B60KD-EP


Transistor: IGBT; 600V; 60A; 304W; TO247-3
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Infineon 0
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AUD 5.5222
Multiples of: 1

Single600 V2.35 V+/- 20 V60 A 304 W TO - 247TubeSiThrough Hole304 W- 55 C  
IRGP4263-EPBF


International Rectifier IGBT Transistors IR IGBT 600V 650V 48A TO-247AD
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Infineon 0
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AUD 5.544
Multiples of: 1

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