IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH36N60B3D1


IGBT Transistors 36 Amps 600V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 5.6418
Multiples of: 1

Single600 V1.8 V+/- 20 V200 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh36n60
FGH75T65SHD-F155


IGBT Transistors FS3TIGBT TO247 75A 650V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 5.6494
Multiples of: 1

                
RGW40TS65DGC11


ROHM Semiconductor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 5.6692
Multiples of: 1

                
IRG7PH35UD1MPBF


Transistor: IGBT; 1200V; 50A; 179W; TO247-3
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Infineon 0
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AUD 5.6748
Multiples of: 122

      179 W         
FGH30N60LSDTU


Fairchild Semiconductor IGBT Transistors PDD
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ON Semiconductor 0
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AUD 5.6777
Multiples of: 1

Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CFgh30n60lsd
IKZA40N65RH5XKSA1


IGBT Trench Field Stop 650V 74A 250W Through Hole PG-TO247-4-3
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Infineon 0
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AUD 5.0443
Multiples of: 240

        TO - 247 - 4Tube     Trenchstop 5
APT15GT60BRDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip 0
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AUD 5.6952
Multiples of: 1

Single        TubeSi     
MSG75T120FQC1


TO-247Plus IGBT Transistors / Modules ROHS
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MASPOWER 0
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AUD 5.7143
Multiples of: 1

                
FGH60T65SHD-F155


IGBTs Trench Field Stop 650V 120A TO-247-3 RoHS
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ON Semiconductor 0
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AUD 5.7242
Multiples of: 1

                
IKZ50N65NH5


IGBT Transistors INDUSTRY 14
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AUD 5.7308
Multiples of: 1

                
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