IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PH50SPBF


IGBTs 1200V 57A TO-247 (AC) RoHS
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Infineon 0
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AUD 5.1945

Multiples of: 1

Single1.2 kV1.75 V20 V57 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
NCE40TD120VTP


TO-247P IGBTs ROHS
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AUD 5.1969

Multiples of: 1

                
IXYQ40N65C3D1


IGBT Transistors
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AUD 5.211

Multiples of: 1

         TubeSi     
FGH60N60UFDTU_F085


Fairchild Semiconductor IGBT Transistors N-Ch 60A 600V FS IGBT
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ON Semiconductor 0
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AUD 5.2115

Multiples of: 1

Single600 V1.8 V+/- 20 V120 A+/- 400 nA  TO - 247 - 3TubeSiThrough Hole298 W- 55 C+ 150 CFgh60n60uf_F085
IGZ75N65H5


IGBT Transistors INDUSTRY 14
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AUD 5.2115

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IKD15N60RF


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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AUD 5.226

Multiples of: 1

Single600 V2.2 V+/- 20 V30 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CRc
STGW15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics 0
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AUD 5.2274

Multiples of: 1

Single1200 V2.1 V20 V30 A250 nA259 W TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 CStgw15h120df2
IXYH20N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS 0
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AUD 5.4838

Multiples of: 1

Single1200 V4 V30 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole278 W- 55 C+ 175 CIxyh20n120
STGWA40S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 0
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AUD 5.2448

Multiples of: 30

Single1.2 kV1.65 V+/- 20 V80 A250 nA  TO 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
IKW40N65ET7


TO-247-3 IGBTs ROHS
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AUD 5.2588

Multiples of: 1

                
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