IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N65L5


IGBT Transistors INDUSTRY 14
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AUD 5.6187
Multiples of: 1

                
IRGP4760PBF


Transistor: IGBT; 650V; 90A; 325W; TO247-3
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AUD 5.6197
Multiples of: 123

      325 W         
IHW30N160R2


Transistor: IGBT; 1600V; 30A; 312W; TO247-3
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AUD 5.6211
Multiples of: 1

      312 W         
STGFW40V60DF


STMicroelectronics IGBT Transistors
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AUD 5.6219
Multiples of: 1

Single600 V1.8 V20 V80 A250 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 C600 - 650V Igbts
IXYH50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 5.6385
Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 247AD - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyh50n65
FGH4L50T65SQD


IGBT Transistors FS4 T TO247 50A 650V 4L
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ON Semiconductor 0
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AUD 5.6565
Multiples of: 1

                
SGP07N120


IGBT Transistors FAST IGBT NPT TECH 1200V 8A
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AUD 5.6689
Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CSgp07n120
IRG7PH35UD1MPBF


Transistor: IGBT; 1200V; 50A; 179W; TO247-3
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AUD 5.6748
Multiples of: 122

      179 W         
AOK40B60D1


Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
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AUD 5.6889
Multiples of: 1

  1.85 V   111 W         
STGB20N45LZAG


IGBT Transistors Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ
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STMicroelectronics 0
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AUD 5.7002
Multiples of: 1

 450 V1.25 V16 V25 A625 uA Aec - Q101D2PAK - 3  Smd/Smt150 W- 55 C+ 175 CStgb20n45lzag
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