IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
CRG40T60AK3HD


TO-247 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO 297
Ships to you
between Wed. 15 Jul to Mon. 20 Jul
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AUD 1.4513

Multiples of: 1

                
STGD20N45LZAG


IGBT Transistors PTD HIGH VOLTAGE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 1.2506

Multiples of: 2500

 450 V1.25 V16 V25 A625 uA Aec - Q101DPAK - 3  Smd/Smt150 W- 55 C+ 175 CStgd20n45lzag
FGD3040G2-F085


Trans IGBT Chip N-CH 390V 25.6A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.2548

Multiples of: 2500

Single        Tape And Reel      
IRGB4B60KD1PBF


IGBT Transistors 600V Low-Vceon Non Punch Through
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Infineon 0
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AUD 1.2608

Multiples of: 1

Single600 V2.5 V+/- 20 V12 A100 nA63 W TO - 220 - 3TubeSiThrough Hole63 W- 55 C+ 175 CRc
IKD06N60RFA


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon 0
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AUD 1.2613

Multiples of: 1

Single600 V2.2 V+/- 20 V12 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt100 W- 40 C+ 175 CRc
IGU04N60TAKMA1


IGBT Transistors Infineons TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.2622

Multiples of: 1

        TO - 251 - 3TubeSi    Trenchstop Igbt
T835-600H


STMicroelectronics IGBT Transistors Snubberless Logic Lv Standard 8A Triac
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STMicroelectronics 0
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AUD 1.269

Multiples of: 1

         TubeSi    T835
STGD10HF60KD


STMicroelectronics IGBT Transistors
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STMicroelectronics 0
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AUD 1.3102

Multiples of: 2500

Single600 V2.75 V20 V18 A100 nA Aec - Q101DPAK - 3TubeSiSmd/Smt62.5 W- 55 C+ 175 C600 - 650V Igbts
XNF20N60T


IGBTs Field Stop 600V 20A TO-220F RoHS
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XINER 0
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AUD 1.2901

Multiples of: 1

                
IRG4RC10UDTRLP


Transistor: IGBT; 600V; 8.5A; 38W; DPAK
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Infineon 0
6 to 16 Weeks Calender.png

AUD 1.2976

Multiples of: 1

Single600 V2.6 V+/- 20 V8.5 A 38 W DPAKReelSiSmd/Smt38 W- 55 C  
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